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METHOD FOR PRODUCING SIC SUBSTRATE PROVIDED WITH GRAPHENE PRECURSOR AND METHOD FOR SURFACE TREATING SIC SUBSTRATE NEW

外国特許コード F180009310
整理番号 KG0157-WO01
掲載日 2018年1月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP016739
国際公開番号 WO 2017188382
国際出願日 平成29年4月27日(2017.4.27)
国際公開日 平成29年11月2日(2017.11.2)
優先権データ
  • 特願2016-089089 (2016.4.27) JP
発明の名称 (英語) METHOD FOR PRODUCING SIC SUBSTRATE PROVIDED WITH GRAPHENE PRECURSOR AND METHOD FOR SURFACE TREATING SIC SUBSTRATE NEW
発明の概要(英語) The present invention comprises a graphene precursor formation process for forming a graphene precursor by heating an SiC substrate so as to sublime Si atoms in an SiC plane of the surface of said SiC substrate, and stopping the heating before the graphene precursor becomes fully covered with graphene. The SiC substrate treated in this graphene precursor formation process has formed therein steps made up of multiple tiers of molecular layers. These steps have formed therein a step structure in which a molecular layer having two dangling bonds of a C atom is disposed closer to the surface side as compared with a molecular layer having one dangling bond of a C atom.
特許請求の範囲(英語) [claim1]
1. By heating the SiC substrate, Si atoms on the Si surface on the surface of the SiC substrate are sublimated to form graphene Forming a precursor and stopping heating before the graphene precursor is covered with graphene, a graphene precursor formation , And the SiC substrate to be processed in the graphene precursor forming step includes a step consisting of a plurality of stages of molecular layers Is formed on the surface of the substrate, and in the step, dangling bonds of C atoms are formed in the A step structure in which two molecular layers are located on the surface side, in which dangling bonds of C atoms are present is Method for manufacturing a graphene precursor with SiC substrate, characterized in that it is formed.

[claim2]
2. The method for producing a SiC substrate with a graphene precursor according to claim 1, wherein the SiC substrate is a <1-1 Off angle is formed so as to be inclined with respect to the 0 0> direction of the graphene precursor Method for producing a SiC substrate with an SiC substrate.

[claim3]
3. The method for producing a graphene precursor-attached SiC substrate according to claim 1, wherein the graphene precursor forming step When the SiC substrate to be treated is 4 H - SiC, a step consisting of four molecular layers is formed In the two molecular layers with the higher step heights, two dangling bonds of C atoms , And in the two molecular layers with lower step heights, one unbonded hand of C atoms In the presence of graphene precursor.

[claim4]
4. A method for producing a graphene precursor-attached SiC substrate according to claim 1, wherein the graphene precursor forming step , An etching step of etching the SiC substrate by heating the SiC substrate under Si vapor pressure is performed Wherein the graphene precursor-containing SiC substrate is produced.

[claim5]
5. The method for manufacturing a SiC substrate with a graphene precursor according to claim 4, wherein the etching step comprises at least heating Which is carried out under predetermined processing conditions determined by including temperature and etching rate Process for producing SiC substrate with precursor.

[claim6]
6. The method for manufacturing a SiC substrate with graphene precursor according to claim 4, wherein the etching step is performed at an etching rate Is carried out at a rate of 1 μm / min or more.

[claim7]
7. The method for producing a SiC substrate with graphene precursor according to claim 1, wherein the graphene precursor forming step Is carried out at a temperature of 140 ° C. or more and 200 ° C. or less, a SiC substrate with a graphene precursor .

[claim8]
8. The method for producing a graphene precursor-attached SiC substrate according to claim 1, wherein the graphene precursor forming step Is carried out at 150 0 ° C. or higher and 165 0 ° C. or lower. .

[claim9]
9. The method for producing a SiC substrate with graphene precursor according to claim 1, wherein the graphene precursor forming step Is carried out in a state where the SiC substrate is accommodated in a processing container having at least an inner surface made of pyrolytic carbon Wherein the graphene precursor-containing SiC substrate is produced.

[claim10]
10. The method for producing the graphene precursor-attached SiC substrate according to claim 1, wherein the graphene precursor forming step , The graphene precursor is uniformly distributed from the base end side to the tip side of the step of the SiC substrate Wherein the graphene precursor is formed on the SiC substrate.

[claim11]
11. The method for producing a SiC substrate with graphene precursor according to claim 1, wherein the Si surface of the SiC substrate , By multiplying one side of the rhombus formed by four adjacent Si atoms by 6 √ {square root over (3)}, and perpendicular to the Si surface With the shape rotated by 30 ° with the direction as the rotation axis as the minimum pattern, the Si atom on the Si surface and the graphene precursor Method for producing SiC substrate with graphene precursor characterized by overlapping array pattern of C atoms of body .

[claim12]
12. The graphene precursor-attached SiC substrate manufactured by the production method according to claim 1, wherein the graphene By inserting an element between the precursor and the SiC substrate, the graphene precursor and the SiC substrate And cutting the bond to form graphene on the SiC substrate without passing through the graphene precursor To prepare a SiC substrate with graphene.

[claim13]
13. The method for determining treatment conditions in the graphene precursor forming step according to claim 1, wherein the graphene precursor forming step With respect to the SiC substrate to be used in the scanning step, scanning in a direction inclined with respect to the height direction of the step of the SiC substrate Based on the brightness and darkness of the SEM image obtained by irradiating the electron beam of the electron microscope with the electron beam, And determining whether or not the graphene precursor has a structure by comparing the processing conditions of the graphene precursor forming step Determination method.

[claim14]
14. The method for determining treatment conditions of the graphene precursor forming step according to claim 1, wherein the graphene precursor forming step Is performed in a state where the SiC substrate is accommodated in a processing container, and in the plurality of processing vessels having different volumes, A step of forming a graphene precursor is carried out so that the SiC substrate is homogeneously formed from the base end side to the tip end side of the step of the SiC substrate As the graphene precursor is formed or the graphene precursor is formed nonuniformly on the SiC substrate By observing how it is going to be done, the necessary volume is judged for the processing container Method of determining the processing condition of the graphene precursor forming step, characterized in that.

[claim15]
15. The SiC substrate is heated by heating under Si vapor pressure and etched, whereby a plurality of stages of molecules Layer, comprising the steps of: adjusting at least said etching rate and said heating temperature, The number of stages of molecular layers in the step formed on the SiC substrate and the number of dangling bonds of C atoms in the molecular layer And selectively forms one of the plurality of types of step structures having at least one of A surface treatment method for a SiC substrate.

[claim16]
16. The surface treatment method for a SiC substrate according to claim 15, wherein the SiC substrate is 4 H - SiC There is a step consisting of four molecular layers in the step structure, and the step height is higher , Two unbonded hands of C atoms are present in the two molecular layers of In the two molecular layers, there are a step structure A in which one dangling bond of C atoms is present, A step consisting of a molecular layer is formed, and unbonded hands of C atoms are formed in one molecular layer And the step of C atom A step structure B in which bond hands are alternately repeated with two steps in both molecular layers and four step A step consisting of a molecular layer is formed, and in the two molecular layers with the higher step heights, C In the case of two molecular layers whose atomic dangling bonds are one and whose step height is lower, C And a step structure C in which there are two dangling bonds of atoms, and step structure A, step structure B, And a step structure C of the SiC substrate selectively. Surface treatment method

[claim17]
17. The step structure of the SiC substrate treated by the surface treatment method of the SiC substrate according to claim 15 is defined as Determining a step structure to be determined, after forming a step structure on the SiC substrate, It is obtained by irradiating the electron beam of the scanning electron microscope from a direction inclined with respect to the height direction of the step A process of judging whether or not the SiC substrate has the step structure on the basis of light and darkness of the SEM image And a step of determining a step structure of the SiC substrate.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KWANSEI GAKUIN
  • 発明者(英語)
  • KANEKO TADAAKI
  • KUTSUMA YASUNORI
  • DOJIMA DAICHI
国際特許分類(IPC)
指定国 (WO2017188382)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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