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COPPER FILM FORMATION DEVICE, COPPER FILM FORMATION METHOD, COPPER WIRING FORMATION METHOD, AND COPPER WIRING

外国特許コード F180009337
整理番号 S2016-0471-C0
掲載日 2018年3月13日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP005390
国際公開番号 WO 2017145876
国際出願日 平成29年2月15日(2017.2.15)
国際公開日 平成29年8月31日(2017.8.31)
優先権データ
  • 特願2016-035760 (2016.2.26) JP
発明の名称 (英語) COPPER FILM FORMATION DEVICE, COPPER FILM FORMATION METHOD, COPPER WIRING FORMATION METHOD, AND COPPER WIRING
発明の概要(英語) The present invention addresses the problem of inexpensively obtaining a semiconductor device that uses copper wiring. A crucible (CuI vapor generating means) (30) is provided on the lower side of a film formation chamber (10) at a location facing a substrate (100). A raw material heating heater (CuI vapor generating means) (31) and a thermocouple (32) are fitted to the crucible (30), and the temperature of the crucible (30) can be measured and controlled. The crucible 30 is filled with particles that serve as the raw material for forming the copper film. The particles are formed from CuI. A CuI vapor is generated by heating the crucible (30) in a vacuum, and the substrate (100) is exposed to the CuI vapor. By setting the temperature Tsub of the substrate (100) to approximately 300°C, it is possible to deposit Cu only on a conductive metal material without depositing any on an insulator.
特許請求の範囲(英語) [claim1]
1. Copper film is formed on a substrate made of a copper film forming device, wherein the substrate is housed inside the reduced pressure atmosphere and in the film formation chamber, heating means for heating the substrate and the substrate, CuI (copper iodide (I) ) steam in the film formation chamber is irradiated on the substrate in the vapor generating means CuI, wherein the copper and a film forming apparatus.
[claim2]
2. Wherein in the substrate heating means, the temperature of the substrate is in the range of 250-350 Kpse characterized in that the copper film-forming apparatus according to claim 1.
[claim3]
3. Wherein the means for generating a vapor CuI, solid CuI (copper iodide (I) ) and vaporized raw materials comprising CuI to generate steam and wherein said film forming apparatus according to claim 1 or 2 copper.
[claim4]
4. Wherein the steam generating means CuI, raw material is heated to a temperature of 300-400 Kpse characterized in that the copper film-forming apparatus according to claim 3.
[claim5]
5. Wherein the pressure in the film formation chamber 1x10-3Torrclaim 1 characterized in that it is less than or equal to any one of claims 1 to claim 4 from the thickness of the copper film of the film deposition apparatus.
[claim6]
6. Wherein the film formation chamber is made of an insulator and an inner surface, and the temperature thereof is 200°C or more and with any of the preceding claim 1 claim 5 from 1 the thickness of the copper in the film forming apparatus.
[claim7]
7. In the substrate at least partially conductive and a copper film is formed on the surface of the film formation method of a copper, heating the substrate, under a reduced atmosphere CuI (copper iodide (I) ) is applied to the surface of the resultant vapor characterized in that the method of forming a film of copper.
[claim8]
8. Wherein the temperature of the substrate and 250-350 ° to a film formation method according to claim 7 copper.
[claim9]
9. (Copper iodide (I) ) CuI containing solid raw materials under a reduced pressure atmosphere heated to a temperature of 300-400 Kpse CuI The steam can be produced by the method of forming a film according to claim 7 or 8 characterized in that the copper.
[claim10]
10. The method according to a second substrate and a pressure of the atmosphere at 1x10-3Torrand less than or equal to claim 9 claim 7 to any of the claims from 1 to the thickness of the copper film forming method.
[claim11]
11. A copper wiring embedded in the insulating layers to form a method for forming a copper wiring, a copper wiring in a concave portion corresponding to the concave portion forming step forming the insulating layer, exposed in the bottom of said recess on the top of the base metal layer, any one of claim 7 claim 10 from 1 up to the film formation of the copper of the copper film is formed by selective copper layer forming step of, characterized in that it comprises a method of forming a copper wiring.
[claim12]
12. Wherein the step of forming the recess between the copper layer forming step, the underlying metal layer formed on the bottom surface includes the step of forming a base metal layer and a method of forming a copper wiring according to claim 11.
[claim13]
13. Wherein the copper wiring includes a lower insulating layer so as to connect with the lower-layer wiring is formed, of the underlying metal layer is formed on the surface of the lower-layer wiring and a method of forming a copper wiring according to claim 11.
[claim14]
14. An insulating layer formed on a substrate in which is embedded in the copper wiring is formed, extending in a direction perpendicular to the surface of the substrate comprises a columnar crystal structure characterized in that the copper wiring.
[claim15]
15. The extends in a direction of a columnar crystal structure in the direction of the (111) copper and a copper wiring according to claim 14.
[claim16]
16. Wherein the degree of orientation of the orientation of the (111) copper wiring is greater than or equal to 90% according to claim 15 characterized in that the surface of the copper wiring.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • IBARAKI UNIVERSITY
  • 発明者(英語)
  • YAMAUCHI SATOSHI
国際特許分類(IPC)
指定国 (WO2017145876)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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