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INFRARED LIGHT ELEMENT

外国特許コード F180009369
整理番号 (S2016-0959-N0)
掲載日 2018年4月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP026743
国際公開番号 WO 2018021259
国際出願日 平成29年7月24日(2017.7.24)
国際公開日 平成30年2月1日(2018.2.1)
優先権データ
  • 特願2016-144974 (2016.7.23) JP
発明の名称 (英語) INFRARED LIGHT ELEMENT
発明の概要(英語) Provided is a compact infrared light element that performs light emission or detection in the infrared to Thz region and operates at room temperature. An infrared light element according to one aspect of the present invention is obtained by forming striped, lattice-shaped, or ring-shaped conductors on a semiconductor or insulator substrate, the intervals therebetween being no more than 1/2 the wavelength of infrared light that resonates with the longitudinal optical (LO) phonon energy, and the infrared light element emits or detects infrared light that resonates with said mode. An infrared light element according to another aspect of the present invention is obtained by forming striped, lattice-shaped, or ring-shaped conductors on a semiconductor or insulator substrate, the intervals therebetween being no more than 1/2 the wavelength of infrared light that resonates with the LO phonon-plasmon coupled (LOPC) mode energy, and the infrared light element emits or detects infrared light that resonates with said mode.
特許請求の範囲(英語) [claim1]
1. The substrate of the insulating material layer as the semiconductor layers, the stripe-shaped, or grid-like conductor is formed of a circular ring, and the space therebetween is a longitudinal optical phonon energy that is in resonance (LO) less than or equal to 1/2 of the wavelength of the infrared light, infrared light that is in resonance mode of emitting infrared light or detecting element.
[claim2]
2. The substrate of the insulating material layer as the semiconductor layers, the stripe-shaped, or grid-like conductor is formed of a circular ring, and the space therebetween is LO phonon-plasmon resonance energy mode (LOPC) coupled to the 1/2 or less than the wavelength of the infrared light, infrared light that is in resonance mode of light emission or detection of an infrared light-element.
[claim3]
3. Wherein the substrate, one or more elements of the composition 2 consists of a multilayer structure, according to claim 1 or 2 function of confining phonons infrared optical element.
[claim4]
4. Wherein the substrate is a n-type or p-type semiconductor material, one or more LO phonon LOPC or 2 mode, the LO phonon or conduction band or the valence band energy LOPC in mode, or a transition energy between the conduction band or the valence band of the infrared light according to claim 1 or 2 region included in the element.
[claim5]
5. Wherein the substrate is a p-type semiconductor having a case, other than the p-type impurity to form a deep impurity level than the acceptor having a level of the semiconductor material, wherein the substrate is a n-type semiconductor having a case, other than the n-type impurity to form a deep impurity level than the semiconductor and has an impurity of a donor, and is smaller than the forbidden band gap by introducing the laser with, the modulation of the optical absorption spectrum according to claim 4 operate infrared optical element.
[claim6]
6. The valence band-conduction band excitation between introducing the laser beam, the light absorption spectra of the infrared light element according to claim 4 source can be modulated.
[claim7]
7. 1ps Or less of the light pulse having a time width of the quantum entangled by inputting a single phenomenon of the infrared photons according to claim 4 radiates infrared light element.
[claim8]
8. High conductivity metal instead of using the semiconductor or other material, a conductivity lower semiconductor interface to the electric field generated by the polarization charges having a structure capable of shielding infrared light element claims 1 or 2
[claim9]
9. A metal ohmic contact and the junction of the semiconductor and a metal having Schottky connection pair according to claim 1 or 2 formed infrared optical element.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • CHIBA UNIVERSITY
  • 発明者(英語)
  • ISHITANI YOSHIHIRO
国際特許分類(IPC)
指定国 (WO201821259)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG

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