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METHOD AND DEVICE FOR EVALUATING TOPOLOGICAL INSULATION FROM SOLID SPIN CHARACTERISTICS UPDATE

外国特許コード F180009370
整理番号 (S2016-1074-N0)
掲載日 2018年4月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP027375
国際公開番号 WO 2018042971
国際出願日 平成29年7月28日(2017.7.28)
国際公開日 平成30年3月8日(2018.3.8)
優先権データ
  • 特願2016-167744 (2016.8.30) JP
発明の名称 (英語) METHOD AND DEVICE FOR EVALUATING TOPOLOGICAL INSULATION FROM SOLID SPIN CHARACTERISTICS UPDATE
発明の概要(英語) In the present invention, a femtosecond pulsed laser 4 is irradiated onto the surface of a solid sample 8 of a topological insulator as excitation light while the polarization state is changed through the rotation of a quarter-wave plate 6; a reverse Faraday effect or reverse Cotton-Mouton effect is induced on the surface of the solid sample 8; through the measurement of the quarter-wave-plate-angle dependency resulting from the effect, localized spin states on the surface of the solid sample 8 and surface band states are evaluated for a topological insulator, or the like; and topological insulation is evaluated.
従来技術、競合技術の概要(英語) BACKGROUND ART
Are considered to be applied to spintronic topological insulator, Te or Sb as a main component referred to as a chalcogen compound mainly and, in the topological surface of the insulator, the band structure on the surface of the spin current flows. This is a technique to measure the spin current, with some reported in the literature.
For example, the polarization state of the laser light for pumping the change of the intensity of the spin current can be measured, and the evaluation of the topological insulator (see Non-Patent Document 1).
On the other hand, the scanning tunneling microscope (STM) and, the angle-resolved photoemission spectroscopy (ARPES) by, in a topological insulator band, gap (Eg) of the evaluation has been carried out, a topological insulator (Topological insulator: TI) (Eg=0) and a conventional insulator (Eg ≠0) (Normal insulator: NI) and can be distinguished, in particular, the film thickness occurs depending on the, the quantum phase transition TI⇔NI becomes possible to observe the (non-patent document 2, see Non-Patent Document 3).
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • UNIVERSITY OF TSUKUBA
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • HASE Muneaki
  • MONDAL Richarj
  • AIHARA Yuki
  • SAITO Yuta
  • TOMINAGA Junji
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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