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SEMICONDUCTOR DEVICE

外国特許コード F180009401
整理番号 (AF47P001)
掲載日 2018年4月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP006776
国際公開番号 WO 2018042707
国際出願日 平成29年2月23日(2017.2.23)
国際公開日 平成30年3月8日(2018.3.8)
優先権データ
  • 特願2016-170939 (2016.9.1) JP
発明の名称 (英語) SEMICONDUCTOR DEVICE
発明の概要(英語) According to the present invention, a contact layer comprising a material with an electron concentration of less than 1 × 1022 cm-3 is directly provided on a surface of a semiconductor crystal of an n-type conductivity with a band gap at room temperature of not more than 1.2 eV. In this way, the wave function penetration from the contact layer side to the semiconductor surface side is suppressed, and, as a result, the generation of a barrier φB due to the Fermi level pinning phenomenon can be suppressed, and a lower resistivity and more highly ohmic contact can be achieved.
特許請求の範囲(英語) [claim1]
1. 1.2eV Or less at room temperature in the band gap of the n-type impurity having a conductivity type on the surface of the semiconductor crystal, an electron density of 1x1022cm-3comprised of a material that is less than the provided directly contact layer comprises a contact structure, the semiconductor device.
[claim2]
2. Wherein the semiconductor crystal, Si, Ge, Si or a compound of Ge and (SixGey) is any one of, the semiconductor device according to claim 1.
[claim3]
3. Wherein the Ge and the semiconductor crystal, wherein the contact layer is formed of Gd, Y, Ho, Er, Yb or germanides Bi as a main component of any one of the material, the semiconductor device according to claim 1.
[claim4]
4. Wherein the semiconductor crystal is Si, the contact layer is made of a material mainly containing Bi, the semiconductor device according to claim 1.
[claim5]
5. Wherein the semiconductor crystal surface region of the donor concentration of 1x1018cm-3or less, the semiconductor device according to claim 1.
[claim6]
6. The contact layer comprises a metal layer over the first, of any one of claims 1-5 1 the semiconductor device.
[claim7]
7. Wherein the semiconductor device, the semiconductor crystal is Si or Ge is, in the n-channel MOSFET, of any one of claims 1-6 1 the semiconductor device.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TORIUMI AKIRA
  • NISHIMURA TOMONORI
国際特許分類(IPC)
指定国 (WO201842707)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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