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MEMORY DEVICE 新技術説明会

外国特許コード F180009403
整理番号 (E104P08)
掲載日 2018年4月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP029923
国際公開番号 WO 2018038098
国際出願日 平成29年8月22日(2017.8.22)
国際公開日 平成30年3月1日(2018.3.1)
優先権データ
  • 特願2016-162048 (2016.8.22) JP
発明の名称 (英語) MEMORY DEVICE 新技術説明会
発明の概要(英語) Provided is a memory device comprising, in this order: a semiconductor section (1); a first insulation layer (2); a charge retention layer (3); a second insulation layer (4); and an electrode (5). The charge retention layer mainly includes a nanocluster (30) of a predetermined number of atoms.
従来技術、競合技術の概要(英語) BACKGROUND ART
As the nonvolatile memory, flash memory is known. Flash memory has a floating gate, stored charge in the floating gate. Flash memory, charge is held in the floating gate determines whether the data is recorded, in addition, by detecting that the read data.
With the miniaturization of the mobile device, the size of the flash memory, such as low power consumption is required, these means can be realized has been studied. For example, to Patent Document 1, the floating gate memory devices using nano-dots have been described. By using the nano-dots, and a miniaturization of the element and reduction of operating voltage. Patent Document 3 is, fullerene clusters in the memory device that uses the floating gate, the charge accumulation time and a fullerene dimer clusters for forming the memory device is described. Non-Patent Document 1 is also, using a carbon nanotube memory device is described, in non-patent document 2, the memory device using a nanocomposite material have been described. In addition, expected as a next generation memory devices as the device, the active layer (channel layer) in an organic memory using an organic semiconductor has been known (for example, Patent Document 4, Patent Document 5 reference).
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKAJIMA Atsushi
  • TACHIDA Eika
  • WATANABE Yoshio
  • HIRATA Naoyuki
  • NEGISHI Yuichi
  • SATO Minako
  • TSUNOYAMA Hironori
  • YOKOYAMA Takaho
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) ERATO NAKAJIMA Designer Nanocluster Assembly AREA
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