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MEMORY DEVICE

外国特許コード F180009403
整理番号 (E104P08)
掲載日 2018年4月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP029923
国際公開番号 WO 2018038098
国際出願日 平成29年8月22日(2017.8.22)
国際公開日 平成30年3月1日(2018.3.1)
優先権データ
  • 特願2016-162048 (2016.8.22) JP
発明の名称 (英語) MEMORY DEVICE
発明の概要(英語) Provided is a memory device comprising, in this order: a semiconductor section (1); a first insulation layer (2); a charge retention layer (3); a second insulation layer (4); and an electrode (5). The charge retention layer mainly includes a nanocluster (30) of a predetermined number of atoms.
特許請求の範囲(英語) [claim1]
1. The semiconductor portion, the first insulating layer 1, a charge retention layer, the first insulating layer 2, provided in that order and electrodes, wherein the charge retention layer is, the number of atoms in the predetermined section including nanoclusters of the memory device.
[claim2]
2. The method according to claim 1 nanoclusters are discretely arranged in the memory device.
[claim3]
3. Wherein the charge retention layer of nanoclusters comprises, a predetermined number of atoms of any one of claims 1 or 2 5% nanoclusters is greater than or equal to the memory device.
[claim4]
4. Wherein said nanoclusters, metal, alloy, metal oxide, semiconductor, ceramic or composites thereof in any one of claims 1-3 nanoclusters of the second memory device.
[claim5]
5. The method of any one of the structural unit is selected from the group consisting 1 to, Au,Ag,Pt,Pd,Ti,Al,Ta,Mo W and one or more elements including any one of claims 1-4 memory device.
[claim6]
6. The method of any one metal ion contained in the designated M @ Si in any one of claims 1-5 clusters of the memory device.
[claim7]
7. Wherein said nanoclusters, a composite nano-Si and Ta, Ti and Si composite nano-cluster, a composite nano-Si and Ru, a composite nano-Si and Lu, a composite nano-Si and Mo, and Si W is any one of claims 1-6 composite nano-cluster of the memory device as claimed in any one of claims.
[claim8]
8. Wherein the nanoclusters, claims 1-7 having organic ligands to the surface of the memory device as claimed in any one of claims.
[claim9]
9. Wherein the organic ligand, wherein the nanoclusters to form a monomolecular film on the surface of the memory device according to claim 8 form.
[claim10]
10. Wherein the organic ligand is, has a structure represented by Chemical Formula RnX, the other in a chemical formula, R is an alkyl group, an allyl group, an alkynyl group, an aryl group, an alkenyl group, a silyl group, an aralkyl group or an alkoxysilyl group, X may have a sulfur, selenium, phosphorous, nitrogen and, n is a natural number memory device as claimed in any one of claims 8 or 9.
[claim11]
11. Wherein the organic ligand having nanoclusters, Au25(SR)18, Au38(SR)24, Au144(SR)60is any one of claims 8-10 memory device as claimed in any one of claims.
[claim12]
12. Wherein the charge retention layer is, and are arranged in layers in any one of claims 1-11 nanocluster film having one of said memory device.
[claim13]
13. Wherein the first insulating layer is 2, any one of claims 1-12 fluorine resin of the memory device.
[claim14]
14. Wherein the first insulating layer is 2, and a water absorption rate of less than 0.02%, having an oxygen permeation coefficient 2.0x10-9cm3, cm/cm2, s,cmHgclaims 1-13 is less than the memory device as claimed in any one of claims.
[claim15]
15. Wherein the surface density of the nanoclusters of the charge retention layer is 1x1012-3x1014/cm one2claims 1-14 in memory device as claimed in any one of claims.
[claim16]
16. Wherein the charge retention layer, said discrete electron energy level by the nanoclusters claims 1-15 memory device as claimed in any one of claims.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKAJIMA ATSUSHI
  • TACHIDA EIKA
  • WATANABE YOSHIO
  • HIRATA NAOYUKI
  • NEGISHI YUICHI
  • SATO MINAKO
  • TSUNOYAMA HIRONORI
  • YOKOYAMA TAKAHO
国際特許分類(IPC)
指定国 (WO201838098)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) ERATO NAKAJIMA Designer Nanocluster Assembly AREA
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