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COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND NITRIDE SEMICONDUCTOR

外国特許コード F180009404
整理番号 AE06-01WO
掲載日 2018年4月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP020513
国際公開番号 WO 2018042792
国際出願日 平成29年6月1日(2017.6.1)
国際公開日 平成30年3月8日(2018.3.8)
優先権データ
  • 特願2016-169994 (2016.8.31) JP
発明の名称 (英語) COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND NITRIDE SEMICONDUCTOR
発明の概要(英語) This compound semiconductor constitutes a high-performance semiconductor device by having a high electron concentration of 5×1019 cm-3 or more, and exhibiting an electron mobility of 46 cm2/V∙s or more, and low electrical resistance. The present invention provides an n conductivity-type group 13 nitride semiconductor that can be film-formed at a temperature within a range from a room temperature to 700°C on a substrate having a large area.
従来技術、競合技術の概要(英語) BACKGROUND ART
Such as GaN or InN device 13 using the group III nitride semiconductor have been widely used. Conventionally, such a 13 of the group III nitride semiconductor crystal growth, MOCVD method or MBE method is used. However, the temperature of the MOCVD method is more than 1000°C is required in processes. Of the compound semiconductor at a low temperature MBE method can be formed, the film forming area can be a limit on the high and the production cost is not directed to mass production.
In addition, in the MBE method, a high concentration of donor is added, the crystal structure generated in a forbidden band in the vicinity of the conduction band of the high-concentration donor level due to the absorption is generated. Therefore, the compound semiconductor film is a problem that decreases the transparency of (non-patent document 1). For this reason, the production of a compound semiconductor, a nitride semiconductor is mainly a practical production, the MOCVD method is used.
Current, high breakdown voltage with low on-resistance of the next generation having the characteristics of the electronic device is demanded. For this purpose, a ternary 2, ternary 3 or ternary compound semiconductor 4, more specifically, the group III nitride compound semiconductor 13 for realizing a semiconductor device is demanded. For this purpose, the compound semiconductor crystal of high quality and further, a doping technique of the refinement is obtained. In particular, GaN is formed on the substrate in the vertical type power device, the carbon concentration of the n-type drift layer and the reduction, there is an urgent need to improve the electron mobility. The following prior art documents can be increased.
Is Patent Document 1, copper metal nitride buffer layer on the substrate, the semiconductor layer is provided with a semiconductor element is disclosed.
Patent Document 2 is, in a thickness of 10-100μm, sintered polymer, heat-resistant flexible graphite substrate provided on the buffer layer and the HfN, GaN buffer layer provided on the semiconductor substrate and a semiconductor layer of the disclosed embodiments. In addition, in Patent Document 3, the group III-V substrate of ZnO compound semiconductor is epitaxially grown by a method of manufacturing.
Non-Patent Document 1 is related to the P-type GaN semiconductor layer is formed as disclosed in the research. Non-Patent Document 2 is the contact resistance of the P-type GaN semiconductor layer has been disclosed in related research. Is the non-patent document 3, the low doping concentration of the nitride semiconductor to a technique disclosed in the research. Is the non-patent document 4, a high electric field of electrons for the transport model of the research are disclosed. Is the non-patent document 5, the carrier mobility in the GaN of the model of the research are disclosed. Is the non-patent document 6, PSD P-type GaN were formed by the contact resistance with respect to the evaluation-related research disclosed. Is the non-patent document 7, the LED is formed on the glass in the experiment example has been disclosed. Is the non-patent document 8, using the PSD method for the growth of a nitride single crystal has been disclosed in the research.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • FUJIOKA Hiroshi
  • UENO Kohei
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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