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COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND NITRIDE SEMICONDUCTOR

外国特許コード F180009404
整理番号 AE06-01WO
掲載日 2018年4月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP020513
国際公開番号 WO 2018042792
国際出願日 平成29年6月1日(2017.6.1)
国際公開日 平成30年3月8日(2018.3.8)
優先権データ
  • 特願2016-169994 (2016.8.31) JP
発明の名称 (英語) COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING SAME, AND NITRIDE SEMICONDUCTOR
発明の概要(英語) This compound semiconductor constitutes a high-performance semiconductor device by having a high electron concentration of 5×1019 cm-3 or more, and exhibiting an electron mobility of 46 cm2/V∙s or more, and low electrical resistance. The present invention provides an n conductivity-type group 13 nitride semiconductor that can be film-formed at a temperature within a range from a room temperature to 700°C on a substrate having a large area.
特許請求の範囲(英語) [claim1]
1. B Group 13 nitrogen, Al, Ga or In one selected from the group consisting of 2 containing an element of the original system, and a ternary system 4 or 3 or the three-element compound semiconductor, 1x1017cm-3more oxygen as an impurity is contained, 5x1019cm-3more than one electron concentrations, N-type conductive, which has an electron mobility 46cm2/V,sor compound semiconductor.
[claim2]
2. N Ga as a main component and a compound semiconductor according to claim 1.
[claim3]
3. 405nm of the absorption coefficients to light in the wavelength region of 2000cm-1compound semiconductor according to claim 2 or less.
[claim4]
4. 450nm with respect to light in a wavelength region of 1000cm extinction coefficient-1compound semiconductor according to claim 2 or less.
[claim5]
5. Measuring the AFM surface roughness due to 5.0nm or less obtained by any one of claims 1-4 RMS value of the compound semiconductor.
[claim6]
6. N-type ohmic electrode metal for the contact resistance is 1x10-4Ω cm-2is less than or equal to any one of claims 1-5 composed of a compound semiconductor.
[claim7]
7. 13 The method comprises Ga as a Group III, Al and/or In any one of claims 1-6 further containing a compound semiconductor.
[claim8]
8. Any one of claims 1-7 containing Si as a donor of the compound semiconductor.
[claim9]
9. Any one of claims 1-7 containing Ge as a donor of the compound semiconductor.
[claim10]
10. Any one of claims 1-9 compound semiconductor is used for the conductive portion and an electrode connecting the contact structure.
[claim11]
11. A semiconductor element according to claim 10 contact structure is provided.
[claim12]
12. Any one of claims 1-9 compound semiconductor is used for the transparent electrode.
[claim13]
13. Or the pulse sputtering method is used, oxygen in an atmosphere of any one of claims 1-9 DPCprocess compound semiconductor film manufacturing method of a compound semiconductor.
[claim14]
14. Claim 13 in the method of manufacturing a compound semiconductor such as, a substrate temperature of 700°C or less at the time of deposition is performed in the method of manufacturing a compound semiconductor.
[claim15]
15. Nitrogen and, B, Al, Ga or In at least one selected from the group consisting of Group 13 containing 1, the conductivity-type or n-type nitride semiconductor, the electron concentration of 1x1020cm-3or more, and, when the specific resistance 0.3x10-3Ω, cm or less, the nitride semiconductor.
[claim16]
16. Wherein the electron concentration of 2x1020cm-3or more, according to claim 15 nitride semiconductor.
[claim17]
17. N-type ohmic electrode metal for the contact resistance is 1x10-4Ω cm-2or less, according to claim 15 or 16 nitride semiconductor.
[claim18]
18. 1X10 oxygen impurities17cm-3containing one or more, of any one of claims 15-17 1 nitride semiconductor.
[claim19]
19. 405nm in a wavelength region of 2000cm with respect to the light absorption coefficient-1or less, according to claim 18 nitride semiconductor.
[claim20]
20. 450nm with respect to light in a wavelength region of 1000cm extinction coefficient-1or less, according to claim 18 nitride semiconductor.
[claim21]
21. Surface roughness obtained by measurement by the AFM RMS value equal to or less than 5.0nm, of any one of claims 15-20 1 nitride semiconductor.
[claim22]
22. Wherein the at least one of the elements of group 13 in the 1 Ga, 1 of any one of claims 15-21 nitride semiconductor.
[claim23]
23. The nitride semiconductor is, either one or both of Si or Ge containing as a donor impurity, of any one of claims 15-22 1 nitride semiconductor.
[claim24]
24. When the specific resistance 0.2x10-3Ω, cm or more, of any one of claims 15-23 1 nitride semiconductor.
[claim25]
25. The resistance ratio 0.15x10-3Ω, cm or more, of any one of claims 15-23 1 nitride semiconductor.
[claim26]
26. When the specific resistance 0.1x10-3Ω, cm or more, of any one of claims 15-23 1 nitride semiconductor.
[claim27]
27. (a) An electron density of 1x1020cm-3, and, when the specific resistance 0.3x10-3Ω, cm, (b) an electron density of 3x1020cm-3, and, when the specific resistance 0.3x10-3Ω, cm, (c) an electron density of 4x1020cm-3, and, when the specific resistance 0.15x10-3Ω, cm, and an electron density of 9x1020cm-3, and, when the specific resistance 0.15x10-3Ω, cm 4 of the numerical range surrounded by points satisfy any of the claims 15-24 1 nitride semiconductor.
[claim28]
28. Wherein any one of claims 18-27 1 based on a nitride semiconductor is provided as a conductive portion, the contact structure.
[claim29]
29. Wherein any of the claims 18-27 1 of the nitride semiconductor layer is provided as the electrode portion, the contact structure.
[claim30]
30. A contact structure according to claim 28 or 29, semiconductor element.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • FUJIOKA HIROSHI
  • UENO KOHEI
国際特許分類(IPC)
指定国 (WO201842792)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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