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MICROWAVE PLASMA TREATMENT APPARATUS NEW コモンズ

外国特許コード F180009472
整理番号 2017000348
掲載日 2018年9月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2014JP072779
国際公開番号 WO2015030191
国際出願日 平成26年8月29日(2014.8.29)
国際公開日 平成27年3月5日(2015.3.5)
優先権データ
  • 特願2013-179286 (2013.8.30) JP
発明の名称 (英語) MICROWAVE PLASMA TREATMENT APPARATUS NEW コモンズ
発明の概要(英語) The purpose of the present invention is to provide a microwave excitation plasma processing device that can produce, under intermediate pressure and high pressure, a plasma jet that is highly uniform, highly dense, low in temperature, and wide. In the present invention, a microwave plasma processing device is characterized by comprising the following: a dielectric substrate; a tapered section provided at one end of the dielectric substrate and having a shape formed so that the thickness of the dielectric substrate becomes gradually smaller; a micro-strip line; an earth conductor; a microwave input section; a gas input opening for inputting gas into the dielectric substrate; a plasma generation section; a gas flow widening section that is provided in the dielectric substrate in order to supply a wide gas flow having a uniform speed to the plasma generation section, and that is formed so that the gas flow width becomes wider as the gas flow advances; a gas flow path for supplying gas to the gas flow widening section; and a nozzle for spraying the plasma.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • KIM Jaeho
  • SAKAKITA Hajime
国際特許分類(IPC)
参考情報 (研究プロジェクト等) Innovative Plasma Processing Group, AIST

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