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MICROWAVE PLASMA PROCESSING DEVICE UPDATE コモンズ 新技術説明会

外国特許コード F180009472
整理番号 2017000348
掲載日 2018年9月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2014JP072779
国際公開番号 WO 2015030191
国際出願日 平成26年8月29日(2014.8.29)
国際公開日 平成27年3月5日(2015.3.5)
優先権データ
  • 特願2013-179286 (2013.8.30) JP
発明の名称 (英語) MICROWAVE PLASMA PROCESSING DEVICE UPDATE コモンズ 新技術説明会
発明の概要(英語) The purpose of the present invention is to provide a microwave excitation plasma processing device that can produce, under intermediate pressure and high pressure, a plasma jet that is highly uniform, highly dense, low in temperature, and wide. In the present invention, a microwave plasma processing device is characterized by comprising the following: a dielectric substrate; a tapered section provided at one end of the dielectric substrate and having a shape formed so that the thickness of the dielectric substrate becomes gradually smaller; a micro-strip line; an earth conductor; a microwave input section; a gas input opening for inputting gas into the dielectric substrate; a plasma generation section; a gas flow widening section that is provided in the dielectric substrate in order to supply a wide gas flow having a uniform speed to the plasma generation section, and that is formed so that the gas flow width becomes wider as the gas flow advances; a gas flow path for supplying gas to the gas flow widening section; and a nozzle for spraying the plasma.
従来技術、競合技術の概要(英語) BACKGROUND ART
In recent years, many techniques such as material development and production is essential in the field of plasma processing techniques are. While maintaining a high non-thermal equilibrium plasma, high density low temperature to produce radicals can be widely used to dry processing techniques.
In addition, conventionally, from the intermediate pressure (1torr - 100torr) under a pressure between atmospheric pressure as one of the source in the plasma, the plasma jet used. The plasma jet is blown from the nozzle of the plasma device since, on the processing target substrate such as a wafer, using a plasma CVD (chemical vapor deposition), etching, ashing (resist ashing), and so forth for the plasma nitriding, are useful.
The current, in order to generate a plasma jet, a method of using DC arc discharge or direct-current pulse discharge is well known. However, DC arc discharge method using the pulse discharge current or direct current, electrode is subject to degradation and can be, of the reactive gas cannot be used, has various problems such as an.
In addition, a method of using a dielectric barrier discharge is well known. However, the method using a dielectric barrier discharge, filament-like discharge occurs, the radical can not generate the high density, has various problems such as an.
In addition, a plasma jet generating device electrodeless method also known. For example, a high frequency of VHF band (30-300MHz) using an inductively coupled thermal plasma generating apparatus has been proposed (see Patent Document 1). However, the apparatus for generating a plasma jet has been proposed in the impedance matching is complicated, large-scale structural problem cannot, because of the use of a high voltage circuit and a manufacturing apparatus and operational problems in a variety has a limit.
On the other hand, the microwave discharge plasma jet is generated using the following advantages. (1) And a microwave power supply is low. (2) And electrodeless operation is possible, to maintain a long service life. (3) Can be a simple element impedance matching. (4) Microwave and the plasma coupling efficiency. (5) The loss radiate to the outside, at a necessary power can be concentrated. (6) In a wide pressure range including stable atmospheric pressure generated by the high-density plasma.
However, conventional micro-wave power microwave plasma generating apparatus using a metal tube as a transmission line and using a waveguide, a microwave transmission circuit can be large and costly structure or a low-power operation at difficult, has such a problem.
Recently, instead of the conventional waveguide tube, a microwave transmission line-power using a micro-strip line in a method of making a plasma jet generating apparatus has been proposed (Patent Document 2 and see non-patent document 1).
19 Conventional micro strip line using Fig. to generate a plasma jet according to the schematic of the apparatus. The apparatus, microwave input unit 31, a taper structure at one end of the gas flow path and the inside of the dielectric substrate 1 is provided, the microstrip line 11 for transmission of microwave power, cover one surface of the dielectric substrate is configured in the grounding conductor 12.
Gas, 21 input from the two gas input port 22 through the gas flow path, and the tapered portion 14 to the grounding conductor 12 in between the microstrip line 11 join together, 10 mm of the width of the nozzle 24 of the dielectric substrate 1 from the blown out to the outside.
In a conventional apparatus, the nozzle 24 of 10 mm width having a uniform flow rate in order to form a gas stream, to either side of the dielectric substrate 1 is provided to the gas input port 21, the flow of gas through the oblique gas flow path 22 is supplied.
Microwave power (2.45GHz), 31 connect through coaxial microwave introduced into the dielectric substrate of 1, 12 and between the microstrip line 11 propagates through the grounding conductor, concentrated at the nozzle 24. Thus, plasma is generated, 1 from the nozzle 24 together with a gas flow blown out to the outside of the dielectric substrate.
On the other hand, in order to increase the productivity in plasma processes, a large area having a width that plasma processing can be a wide plasma jet is a strong demand for the development of are. The plasma generating apparatus using a micro-strip line structure, a micro-strip line by the scale of the array so that it is possible, for the future is expected.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • KIM JAEHO
  • SAKAKITA HAJIME
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) Innovative Plasma Processing Group, AIST

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