TOP > 外国特許検索 > PRODUCTION METHOD AND PRODUCTION DEVICE FOR NITROGEN COMPOUND

PRODUCTION METHOD AND PRODUCTION DEVICE FOR NITROGEN COMPOUND UPDATE コモンズ 新技術説明会

外国特許コード F180009473
整理番号 2016002314
掲載日 2018年9月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP082629
国際公開番号 WO 2017078082
国際出願日 平成28年11月2日(2016.11.2)
国際公開日 平成29年5月11日(2017.5.11)
優先権データ
  • 特願2015-216552 (2015.11.4) JP
発明の名称 (英語) PRODUCTION METHOD AND PRODUCTION DEVICE FOR NITROGEN COMPOUND UPDATE コモンズ 新技術説明会
発明の概要(英語) The present invention provides a method and a device which produce a nitrogen compound membrane by plasma without applying a voltage to a substrate and without the need of a large container, suitable for an increase in area, and employing a high-pressure process which uses little power. In the production of a nitrogen compound where microwave plasma is generated to produce the nitrogen compound, by applying the microwaves to a feedstock gas containing a nitrogen-based gas which is discharged from a nozzle to the surface of a substrate at a controlled rate, the plasma containing a nitrogen-based active species generated from the feedstock gas is emitted to the surface of the substrate. In this step, the pressure is set higher than a pressure at which the mean free path of ions of the plasma is smaller than the Debye length.
従来技術、競合技術の概要(英語) BACKGROUND ART
Conventional, nitrogen compounds as a method for producing a thin film, and the surface of the substrate to nitriding treatment in a, nitrogen compound formed on the surface of the substrate by the thin film fabrication techniques and the like are known.
Nitride processing method, more specifically the surface modification treatment, such as titanium nitride the surface of the steel and the surface modifying agent are widely used as a method. The nitration surface treatment products, machine parts and tools such as a spindle or a gear, turbine or internal combustion engine such as fuel injection nozzle parts, a gear and a reducer such as a power shovel, such as an aircraft or automobile parts are used. In addition, in recent years, medical parts on a nitriding treatment or the like, in various fields has been developed. Processing method is a nitride, to increase the hardness, corrosion resistance is applied, the surface of the abrasion resistance in the case of giving the function applies the, nitrogen-based high density can be utilized as the active species supply method.
Nitride processing method, the high density nitrogen-based active species supply techniques are, Metal Organic Chemical Vapor Deposition (hereinafter, referred to as MOCVD.) At the surface of a substrate such as can be applicable to the production of material.
In semiconductor technique, blue GaN-based compound semiconductor material, the green light emitting diode (LED), incandescent light bulb or an existing lighting device such as a fluorescent lamp which takes the place of energy saving, long life illumination, which have become increasingly common as the light source for display. LED illumination, white blue LED exciting a yellow phosphor in photosynthesis system is mostly used. In this case a single LED is about 270lm/W the theoretical limit of the light emission efficiency. In order to improve further the emission energy efficiency (theoretical efficiency>400lm/W), multi-color LED free white LED emit light at the phosphor needs to be developed. There is, on the order of 30% composition In InGaN LED green luminescent material is used as an improvement of the external quantum efficiency. The current, the luminous efficiency of the green LED, a high performance product of about 20% and the blue and red LED than the emission efficiency, or less than one half. The reason for this is, the element constituting a high vapor pressure of a low temperature of about 600°C In desirable growth on the other hand, nitrogeN is, 800°C or more preferably 1000°C or more at a high temperature decomposing ammonia state nitrogen is necessary, it is difficult to obtain optimal crystal growth conditions. Therefore, 800°C or less nitrogen-based active species can be supplied at a high technique is demanded.
Nitriding method as, for example, substantially only gas nitriding furnace is supplied to the ammonia gas, ammonia gas and ammonia decomposition gas member in a technique of forming a nitride layer on the surface (see Patent Document 1) are known.
In addition, a metal nitride on the surface of the metallic compound layer and can be efficiently formed, compound layer and nitrogen and that of a synergistic effect of the diffusion layer and the hardness can be increased, the ion nitriding by glow discharge method (see Patent Document 2) are known. In patent document 2, the metal member -700V, 0.95A (665W) hydrogen as the working gas ion nitriding at 2slm, using 0.5slm ammonia, 1Torr 1 atmosphere pressure in the ion nitriding processing time is performed. At this time, the temperature of the metal member at a temperature of 300-650 ° C., the surface of the metallic 0.001-2 mA/cm^2 glow discharge which in current density, of the emission intensity ratio NH 0.2-0.1 radical and nitrogen in the plasma state and the ion nitriding is performed.
An alloy of titanium by the atmospheric pressure plasma thin film synthesis techniques are, in comparison with the conventional nitriding method known as a simple nitriding method (see non-patent document 1). By the use of atmospheric plasma, simplification of the processing apparatus, high-density radical generation, it is possible to limit the metal surface is roughened. In non-patent document 1, (5kv, 1.2A, 21kHz) high-frequency power source 4 effective power in kilowatts, nitrogen as the working gas 99%, hydrogen gas 1% is used.
Recently, in the intermediate-pressure and high pressure from a low, stabilize the plasma generated, the microwave plasma processing apparatus can be maintained has been developed (non-patent document 2, see Patent Document 3). Typically, the characteristics of the processing of plasma such as plasma CVD, because it strongly depends on the pressure produced plasma, plasma with respect to the pressure of the following three types classified into two types. (1) A low-pressure plasma: 0.01Torr-1.0Torr pressure region, (2) the intermediate-pressure plasma: pressure region 1.0Torr-100Torr, (3) high-pressure: pressure region 100Torr-760Torr (atmospheric pressure). It should be noted that, hereinafter, in units of pressure Pa (1Torr=133 Pa).
The inventors of the present invention, instead of the microstrip line waveguide microwave transmission line is used as the microwave plasma processing apparatus has already proposed (non-patent document 2, see Patent Document 3). The apparatus comprises, a conventional waveguide using the microwave plasma processing apparatus, simple structure, low cost fabrication, has advantages such as low power operation, from which a variety of industrial applications is expected.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • ITAGAKI HIROTOMO
  • SAKAKITA HAJIME
  • KIM JAEHO
  • OGURA MUTSUO
  • WANG XUELUN
  • HIROSE SHINGO
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) Innovative Plasma Processing Group, AIST

PAGE TOP

close
close
close
close
close
close