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ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC COMPOUND AND ORGANIC SEMICONDUCTOR DEVICE 新技術説明会

外国特許コード F180009482
掲載日 2018年9月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP031671
国際公開番号 WO 2018043725
国際出願日 平成29年9月1日(2017.9.1)
国際公開日 平成30年3月8日(2018.3.8)
優先権データ
  • 特願2016-172322 (2016.9.2) JP
発明の名称 (英語) ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC COMPOUND AND ORGANIC SEMICONDUCTOR DEVICE 新技術説明会
発明の概要(英語) This organic semiconductor material contains at least the following: a unit A including a skeleton structure based on isoquinolino-isoquinoline (IQIQ) represented by formula (1); a fatty acid-based chain unit B connected by a single bond with unit A; and a unit C which is a hydrogen atom, or a group containing a fatty acid chain and/or a cyclic structure, unit c being connected by a single bond with unit A. The organic semiconductor material exhibits liquid crystal properties, has a deep LUMO level, and can be preferably used as an n-type organic transistor material. This invention also provides a novel compound.
従来技術、競合技術の概要(英語) BACKGROUND ART
In general, has a molecular structure of the 'bar', and, an extended aromatic π - conjugated sites at the liquid crystal material that is, a relatively flexible long-chain hydrocarbon chain and a characteristic structure, useful liquid crystalline organic semiconductor as well as, a water-soluble organic transistor has a structure similar to that of the material.
In fact, many organic transistor material (for example, quota thiophene, (BTBT) benzo-thieno benzothiophene, anthracene derivative) is, in a smectic liquid crystal phase temperature region tends to be.In addition, in a recent report, such as a liquid crystal phase is the smectic liquid crystal phase of these, can be a uniform film by wet processes, and a high-mobility material, the high heat resistance can be realized by the reported, liquid crystal phase such as smectic liquid crystal is suitable as material for the organic transistor has been attracting attention as (Patent Document 1, 2).
In the organic transistor, an organic transistor using pentacene crystal material (Non-Patent Document 1) since the reported, (non-patent document 2) oligothiophene, pentacene TIPS - 5 (Non-Patent Document 13) and benzo-thieno benzothiophene, and derivatives thereof such as 10 are combined, to produce the transistor.
However, n-type organic semiconductor material has a low LUMO level (deep LUMO level) required for a material, under the atmosphere can be n-type (electron transportable) the operation of the organic semiconductor material is necessarily extremely, the, n-type transistor operation of materials that can be limited has been reported (Non-Patent Document 4-and Non-Patent Document 6).Therefore, n-type organic transistor of the CMOS fabrication is applied to the material required, electricity is still a search is performed.
Having a deep LUMO level as the semiconductor material of a material such as fullerene is reported, due to poor solubility of the fullerene film is difficult to uniformly wet processes.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • HANNA JUNICHI
  • YANG TENGZHOU
  • IINO HIROAKI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) 平成26年度A-STEP(ハイリスク挑戦タイプ)液晶性有機トランジスタ材料の開発
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