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MANUFACTURING METHOD FOR SEMICONDUCTOR LAMINATED FILM, AND SEMICONDUCTOR LAMINATED FILM NEW

外国特許コード F180009493
整理番号 S2016-0877-C0
掲載日 2018年11月1日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP025436
国際公開番号 WO 2018012546
国際出願日 平成29年7月12日(2017.7.12)
国際公開日 平成30年1月18日(2018.1.18)
優先権データ
  • 特願2016-140117 (2016.7.15) JP
発明の名称 (英語) MANUFACTURING METHOD FOR SEMICONDUCTOR LAMINATED FILM, AND SEMICONDUCTOR LAMINATED FILM NEW
発明の概要(英語) Provided is a manufacturing method for a semiconductor laminated film, which comprises a step for forming a semiconductor layer containing silicon and germanium on a silicon substrate via sputtering, wherein, during sputtering, the film deposition temperature of the semiconductor layer is less than 500°C and the film deposition pressure of the semiconductor layer is 1mTorr to 11mTorr inclusive, or the film deposition temperature of the semiconductor layer is less than 600°C and the film deposition pressure of the semiconductor layer is greater than or equal to 2mTorr and less than 5mTorr; the volume ratio of hydrogen gas in the sputtering gas is less than 0.1%; and the relationship t ≤0.881×x-4.79, where t (nm) is the thickness of the semiconductor layer and x is the ratio of germanium atoms to the sum of silicon atoms and germanium atoms in the semiconductor layer, is satisfied.
従来技術、競合技術の概要(英語) BACKGROUND ART
As the next generation of ultra-high-speed Si-based device, for communication (High Electron Mobility Transistor: HEMT) high electron mobility transistor, doped channel field-effect transistor (Field-Effect Transistor Doped-Channel: DCFET), a resonant tunneling diode (Resonant Tunnel Diode: RTD), a hetero bipolar transistor (Hetero-Bipolar Transistor: HBT), strained-channel metal - oxide - semiconductor field effect transistor Field-Effect Transistor (Metal-Oxide-Semiconductor: MOSFET) and the like in these devices ., in particular, hole carrier type (p-HEMT or HHMT) HEMT, positive hole carriers (p-DCFET) DCFET type, a hole of a tunnel type (p-RTD) RTD (HBT) and a hetero bipolar transistor, a channel distortion of the hole-carrier-type SiGe (SiGe p-MOSFET channel distortion) and the MOSFET channel of a buried-type MOSFET (p-MOSFET of the buried channel) is, the silicon (Si) substrate, and substantially matching the Si silicon germanium (SiGe) layer having a compressive strain and, a hetero structure is used.
Is SiGe having compressive strain, the strain-free SiGe compressive strain (compressive strain in the Si/SiGe/Si) Si can be sandwiched, the band whose width is changed for a hole in the valence band potential well is formed for a high-speed or realize the structure, a compressive strain SiGe channel layer is used as the hole mobility through and improve the (speed) can be, the speed of the device can be realized. In particular, the composition of the SiGe layer Ge (atomic) ratio is increased by increasing the compressive strain in the SiGe layer, a potential well becomes deep, in addition, the mobility is increased, it is possible to realize faster devices possible.
Non-Patent Document 1 for example (Journal of Applied Physics,Vol.95,No.12,15 June 2004, p.7681-7689) is, by CVD (Chemical Vapor Deposition) method, the SiGe layer is formed on the Si substrate is described. Also, for example Patent Document 1 (Japanese Patent Laid-Open Patent Publication 2008-21674) is, as a sputtering using a mixed gas containing hydrogen, by a sputtering method, a SiGe layer formed on the Si substrate is described.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
  • NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
  • 発明者(英語)
  • SUDA YOSHIYUKI
  • TSUKAMOTO TAKAHIRO
  • MOTOHASHI AKIRA
  • DEGURA KYOHEI
  • OKUBO KATSUMI
  • YAGI TAKUMA
  • KASAMATSU AKIFUMI
  • HIROSE NOBUMITSU
  • MATSUI TOSHIAKI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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