Top > Search of International Patents > PLASMA GENERATING DEVICE, PLASMA SPUTTERING DEVICE, AND PLASMA SPUTTERING METHOD

PLASMA GENERATING DEVICE, PLASMA SPUTTERING DEVICE, AND PLASMA SPUTTERING METHOD

Foreign code F180009511
File No. (S2017-0320-N0)
Posted date Nov 2, 2018
Country WIPO
International application number 2018JP002876
International publication number WO 2018143164
Date of international filing Jan 30, 2018
Date of international publication Aug 9, 2018
Priority data
  • P2017-015548 (Jan 31, 2017) JP
Title PLASMA GENERATING DEVICE, PLASMA SPUTTERING DEVICE, AND PLASMA SPUTTERING METHOD
Abstract The present invention relates to a plasma sputtering device characterized by being provided with: one or more plasma generating devices having an insulating tube having an expanding inside diameter and provided with a gas introduction opening in an end part or a side part, and a first electromagnet or permanent magnet group and a radio frequency antenna capable of applying a static magnetic field; a second electromagnet disposed in a region downstream of the plasma generating devices and capable of forming a curved magnetic field line structure; a target mechanism capable of applying a direct current or radio frequency voltage, wherein the mechanism has a permanent magnet embedded therein and is provided with a cooling mechanism; a wafer stage facing the target mechanism; a second permanent magnet group surrounding the wafer stage; and a mechanism for thermal insulation between a target material and the target mechanism. This plasma sputtering device avoids damage to wafers, is further provided with a mechanism for raising the heat of target material, and is capable of high speed sputtering by which large diameter wafers can be coated uniformly and thin films can be formed from magnetic targets.
Outline of related art and contending technology BACKGROUND ART
The semiconductor device, such as a magnetic recording device in the field of production, thin film forming apparatus, the pull-in to the target material ions in the plasma, particles scattered due to ion bombardment to sputter deposited on the substrate surface is widely used.Per unit time into the thickness of the sputtered target material is the ion current, ion density of the target material surface that is to be proportional to, the industrial productivity in order to realize high speed sputtering apparatus, the vicinity of the target high-density plasma is required to generate.
The progress of the miniaturization of a device of a high-quality crystal thin film or as a request is increased, ion damage to the substrate is a significant problem and, has been widely used in the magnetron sputtering method, a target material for forming plasma directly between the substrate, and is difficult to avoid ion damage, during the plasma generation density due to this problem becomes remarkable.For generating the discharge of the plasma to attract ions are simultaneously performed in the same power source, the amount of ions flowing to the target material and its energy cannot be controlled independently.In addition, in the magnetron sputtering, the target surface for the plasma confinement in the presence of leakage flux, the magnetic body is difficult to use in the target.
Plasma generation can be controlled independently to attract ions such as the sputtering apparatus, an inductively coupled plasma source or helicon wave plasma source and the target substrate inside the sputtering apparatus was inserted has been disclosed (Japanese Patent Laid-Open Patent Publication 2003-289070; Patent Document 1).This method directly for the substrate is exposed to a plasma, ion damage to the substrate is difficult to avoid, the measures are not referred to.
Damage-free sputtering apparatus, a helicon wave excitation for the sputtering apparatus is disclosed (Japanese Patent Laid-Open Patent Publication 2002-329669; Patent Document 2).In general the plasma generating unit and the ion pull-in is prepared separately in such a method, it is believed that the most efficient sputtering target and the substrate is disposed on the opposite arrangement is difficult to take.
Flow into the plasma to the substrate, flows into the substrate the ion energy generated in the entire surface of the substrate determined by the potential drop of the sheath structure, high energy ions into the substrate as a result cause a damage.This potential is determined by the electron temperature drop, the substrate surface is necessary to reduce the electron temperature.Of the plasma flow so far is applied to the lines of magnetic force perpendicular to the direction of the magnetic filter system is employed to reduce the temperature of the electronic method is disclosed (Japanese Patent Laid-Open Patent Publication 2005-183062; Patent Document 3), flows into the substrate in the sputtering device in the ion energy is not mentioned at all.
A helicon wave excitation plasma-screen inductively coupled plasma generator and the generator is, generally cylindrical insulating tube has a feature of generating a plasma (for example, Patent Document 1 and Patent Publication 3224443; Patent Document 4).Such a cylindrical insulating tube in the inside of the high-frequency electromagnetic field in the event of a high density plasma, an insulating inner wall of the plasma to be difficult to reduce the loss of, in the downstream region of the plasma source it is difficult to maintain the high density plasma.The plasma density and further when the electric power advances, neutral particles due to the phenomenon referred to as depletion due to the change in the plasma distribution becomes prominent loss, downstream of the plasma source can be decreased due to plasma density have been reported (Non-Patent Document 1 and 2).
Downstream of the plasma source as in the method for maintaining the high density plasma, the permanent magnet is provided on the rear surface of the target convergence magnetic field is formed in the plasma can be converged to this method has been disclosed (Japanese Patent Laid-Open Patent Publication 2015-135883; Patent Document 5).
In addition, the plasma in the sputtering method, film formation rate on the substrate and the characteristics of the thin film is formed, varies depending on the target temperature and it can be seen that, in a wide range is required to control the temperature of the target surface.Further, the temperature of the target material is deposited by vapor deposition when the phenomenon occurs, and the speed of film formation (Non-Patent Document 3), the temperature of the target material in the case of a sublimation material, further by sublimation from solid targets high deposition rate becomes possible.
Plasma film by sputtering in order to ensure the productivity of the device, a relatively large diameter wafer of a series of processes can be performed at high speed with respect to the plasma of the sputtering apparatus is a need to develop.
The plasma density distribution is formed, the degree of ionization of a neutral gas are known and can vary depending on (non-patent document 1 and 2), using the reactive gas in the sputtering method, depending on the type of gas to be introduced into the plasma distribution is largely considered to change.Thus, for example Patent Document 1 and of the sputtering device 2, depending on the type of gas to be introduced into the plasma generating unit of the design need to be adjusted, the productivity, the versatility of the sputtering apparatus from the viewpoint of the improvement.
Patent Document 1 and 4 of the plasma sputtering apparatus and plasma generation method, a plasma source high-density plasma cannot be maintained in the downstream region of the problem and, in order to suppress the damage on the substrate sputtering unit to prepare the plasma generating plasma in a sputtering apparatus, it is difficult to realize high speed sputtering of the present invention.
Patent Document 2 of the plasma sputtering apparatus, the linear plasma along the magnetic lines are transported to the target region, there is a limit in the arrangement angle of the substrate, the sputtering efficiency and most of the target member may be arranged opposing to the substrate difficult.
Plasma sputtering apparatus of the Patent Document 2, 4, 5, the sheath structure of the entire surface of the substrate into the high-energy ions due to the formation may be difficult to avoid, to the ion damage to the substrate needs to be suppressed.
Patent Document 1, 2, 4, and plasma sputtering apparatus 5, the target member is not provided with the heating mechanism, a variety of target materials may not be corresponding to the optimal processes.
Patent Document 1, 2, 4, and plasma sputtering apparatus 5, and has only a single plasma source, in consideration of the productivity of the substrate with a large diameter for uniformity of plasma density distribution of the film adjustment is determined based on only the design of the plasma source, the change of the distribution caused by the gas species to the processes more flexible it is difficult to achieve.
Scope of claims (In Japanese)請求の範囲
[請求項1]
 内径が拡大し端部または側部にガス導入口を備えた絶縁管、静磁場を印加可能な第1の電磁石または永久磁石群及び高周波アンテナを有した1個または複数個のプラズマ発生装置により1個または複数個のプラズマを発生させ、下流域に配設された第2の電磁石による湾曲した磁力線構造によりプラズマを真空層へ流してターゲット近傍に局所化し、前記ターゲットへイオンを引き込むことを特徴とするプラズマスパッタリング方法。
[請求項2]
 前記ターゲットへイオンを引き込む際に、ターゲット材へ流入するイオンエネルギーにより昇温させる請求項1に記載のプラズマスパッタリング方法。
[請求項3]
 基板ステージ近傍の永久磁石による磁力線構造によって、ターゲット機構に対向する前記基板ステージへのイオン入射エネルギーを抑制して成膜する請求項1または2に記載のプラズマスパッタリング方法。
[請求項4]
 プラズマ発生装置からターゲットへの湾曲した磁力線と干渉しない位置、またはその位置よりもターゲットから離れた位置へ基板を設置し、基板へのプラズマダメージを抑制する請求項1~3のいずれかに記載のプラズマスパッタリング方法。
[請求項5]
 プラズマ発生装置と同等またはそれ以上の面積を有するターゲットを配置し、ターゲット材料以外へのイオン照射を抑制する請求項1~4のいずれかに記載のプラズマスパッタリング方法。
[請求項6]
 内径が拡大し端部または側部にガス導入口を備えた絶縁管、静磁場を印加可能な第1の電磁石または永久磁石群及び高周波アンテナを有した1個または複数個のプラズマ発生装置と、前記プラズマ発生装置の下流域に配設された、湾曲した磁力線構造を形成する第2の電磁石と、ターゲット機構と、ターゲット機構に対向する基板ステージとを備えていることを特徴とするプラズマスパッタリング装置。
[請求項7]
 前記ターゲット機構に、永久磁石が埋設され、直流または高周波電圧印加可能である請求項6に記載のプラズマスパッタリング装置。
[請求項8]
 前記ターゲット機構が冷却機構を有する請求項6または7に記載のプラズマスパッタリング装置。
[請求項9]
 ターゲット材料と前記ターゲット機構の間に断熱機構を有する請求項6~8のいずれかに記載のプラズマスパッタリング装置。
[請求項10]
 前記基板ステージ周囲に第2の永久磁石群を有する請求項6~9のいずれかに記載のプラズマスパッタリング装置。
[請求項11]
 前記第1の電磁石及び第2の電磁石または永久磁石を埋没したターゲット機構によって形成される湾曲した磁力線構造と干渉しない位置、またはその位置よりもターゲットから離れた位置へ基板を設置した請求項6~10のいずれかに記載のプラズマスパッタリング装置。
[請求項12]
 プラズマ発生装置と同等またはそれ以上の面積を有するターゲットを配置し、ターゲット材料以外へのイオン照射を抑制する請求項6~11のいずれかに記載のプラズマスパッタリング装置。
[請求項13]
 前記第1の電磁石または第1の永久磁石群が前記絶縁管の長手方向の静磁場を印加可能であり、前記高周波電力供給装置が周波数2MHz~100MHz帯の高周波電力供給装置であり、前記絶縁管周囲に誘導結合性高周波アンテナが設置されている請求項6~12のいずれかに記載のプラズマスパッタリング装置。
[請求項14]
 基板ステージ周囲の第2の永久磁石群が、基板表面に平行方向の静磁場を印加可能な永久磁石群である請求項10~13のいずれかに記載のプラズマスパッタリング装置。
[請求項15]
 第2の電磁石の励磁電流を時間的に変動させる手段を有する請求項6~14のいずれかに記載のプラズマスパッタリング装置。
[請求項16]
 内径が拡大し端部または側部にガス導入口を備えた絶縁管と、前記絶縁管の静磁場を印加可能な第1の電磁石または第1の永久磁石群と、2MHz~100MHz帯の周波数を有する高周波電力供給装置と、前記絶縁管周囲に設置された誘導結合性高周波アンテナとを備えていることを特徴とするプラズマ発生装置。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • TOHOKU UNIVERSITY
  • Inventor
  • TAKAHASHI Kazunori
  • FUKUSHIMA Jun
  • ANDO Akira
  • SASAKI Yasumasa
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Please contact us by facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close