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HEXAGONAL BORON NITRIDE THIN FILM AND METHOD FOR MANUFACTURING SAME NEW

外国特許コード F180009525
整理番号 (K203P09)
掲載日 2018年11月2日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP000107
国際公開番号 WO 2018128193
国際出願日 平成30年1月5日(2018.1.5)
国際公開日 平成30年7月12日(2018.7.12)
優先権データ
  • 特願2017-001291 (2017.1.6) JP
発明の名称 (英語) HEXAGONAL BORON NITRIDE THIN FILM AND METHOD FOR MANUFACTURING SAME NEW
発明の概要(英語) The present invention provides a hexagonal boron nitride thin film and a novel method for manufacturing a hexagonal boron nitride thin film that is suitable for application to electronics and other industrial uses, and whereby it is possible to inexpensively manufacture a hexagonal boron nitride thin film having a large surface area, a uniform thickness of 1 nm or greater, and few grain boundaries. This hexagonal boron nitride thin film is characterized by having a thickness of 1 nm or greater, and in that the average value of the half-value width of an E2g peak obtained from a Raman spectrum is 9-20 cm-1.
従来技術、競合技術の概要(英語) BACKGROUND ART
(H-BN) is hexagonal boron nitride, boron atoms and nitrogen atoms are alternately arranged in a hexagonal lattice has a layered structure, and a plurality of stacked layers in the bulk crystal is in.Is hexagonal boron nitride, the band gap as large as 5.9eV, is an excellent insulator.In addition, the hexagonal boron nitride has high flatness at the atomic level.
From such a feature, the hexagonal boron nitride thin film, an insulating film material such as graphene as a two-dimensional atoms excellent characteristics are known.For example, graphene oxide electrode is attached on the silicon substrate and a device, carrier mobility is measured 2,000-20,000 cm2 /Vsa value obtained on a, the graphene oxide and the silicon substrate of thickness 10 nm of the hexagonal boron nitride thin film is interposed, a carrier mobility 15,000-60,000 cm2 /Vsknown to be improved.
Transition metal chalcogenides such as sulfur and a chalcogen and a transition metal and referred to as the atoms of the material film of the layered hexagonal boron nitride thin film may be increased by means of known characteristics could be improved.For example, of two hexagonal boron nitride thin film of molybdenum disulfide is disposed between the two-dimensional atoms, the carrier mobility at a low temperature of 10 K 34,000 cm2 /Vsto have been reported to be increased.Further, the underlying tungsten disulfide thin hexagonal boron nitride is placed, the intensity of the fluorescence intensity of tungsten disulfide, the half width of the emission peak can be greatly reduced have been reported.Is a silicon oxide substrate surface roughness and optical phonons, impurities in the surface charge, a two-dimensional atoms thereof on the substrate is a silicon oxide film leads to deterioration of characteristics of the material on the other hand, the hexagonal boron nitride thin film to such an effect can be shielded, electrically two-dimensional material, leading to significant improvement of optical characteristics.For this reason, a variety of atoms of the hexagonal boron nitride thin film of the film material as the insulating substrate is less than ideal.
Used in such applications the conventional thin-film substantially all of the hexagonal boron nitride, hexagonal boron nitride crystal grains of a small separation formed in the bulk are.Hexagonal boron nitride single crystal synthetic high temperature, high pressure are required, the hexagonal boron nitride thin film has been transferred is peeled off is very small size about 1 μm and about, the thickness and the shape is difficult to control.Therefore, the insulating film of the hexagonal boron nitride is very difficult as the industrial applications have been.
In such a situation, as an alternative to release of grains of a bulk crystal, a chemical vapor deposition (CVD) the surface of the substrate and a boron nitride film is formed by a method such as is proposed.
For example, in Patent Document 1, can be chemically dissolved a substrate made of a metal or metal compound on the surface and forming a single crystal structure, the raw material gas into contact with a CVD method to a thickness on the surface of the single crystal by the 1 h-BN as a one-atom to form a monolayer film has been proposed.
In addition, in Patent Document 2, a substrate made of a metal or metal compound to the surface, the surface roughness (Rmax) 5nmor less after polishing, the polished surface as a template, the surface of the substrate thickness of 1-2 atomic layers or a mono-atomic layer 2 h-BN thin film made from a single atomic layer is formed has been proposed.
In addition, in Patent Document 3, the graphene layer on a semiconductor substrate relates to a method of forming, between the substrate and the graphene layer can include a boron nitride layer has been described, the boron nitride layer, a single layer or a mono-atomic layer 2 one or more of boron nitride having a thickness of the layer sequence of layers has been described.In addition, in Patent Document 3, a metal film on the surface of the semiconductor substrate is formed, the graphene and boron nitride layer, the metal film surface of the semiconductor substrate can be formed between the front and back have been described.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • Hiroaki Ago
  • Tanaka Daichi
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) PRESTO Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers AREA
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