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HEXAGONAL BORON NITRIDE THIN FILM AND METHOD FOR MANUFACTURING SAME

Foreign code F180009525
File No. (K203P09)
Posted date Nov 2, 2018
Country WIPO
International application number 2018JP000107
International publication number WO 2018128193
Date of international filing Jan 5, 2018
Date of international publication Jul 12, 2018
Priority data
  • P2017-001291 (Jan 6, 2017) JP
Title HEXAGONAL BORON NITRIDE THIN FILM AND METHOD FOR MANUFACTURING SAME
Abstract The present invention provides a hexagonal boron nitride thin film and a novel method for manufacturing a hexagonal boron nitride thin film that is suitable for application to electronics and other industrial uses, and whereby it is possible to inexpensively manufacture a hexagonal boron nitride thin film having a large surface area, a uniform thickness of 1 nm or greater, and few grain boundaries. This hexagonal boron nitride thin film is characterized by having a thickness of 1 nm or greater, and in that the average value of the half-value width of an E2g peak obtained from a Raman spectrum is 9-20 cm-1.
Outline of related art and contending technology BACKGROUND ART
(H-BN) is hexagonal boron nitride, boron atoms and nitrogen atoms are alternately arranged in a hexagonal lattice has a layered structure, and a plurality of stacked layers in the bulk crystal is in.Is hexagonal boron nitride, the band gap as large as 5.9eV, is an excellent insulator.In addition, the hexagonal boron nitride has high flatness at the atomic level.
From such a feature, the hexagonal boron nitride thin film, an insulating film material such as graphene as a two-dimensional atoms excellent characteristics are known.For example, graphene oxide electrode is attached on the silicon substrate and a device, carrier mobility is measured 2,000-20,000 cm2 /Vsa value obtained on a, the graphene oxide and the silicon substrate of thickness 10 nm of the hexagonal boron nitride thin film is interposed, a carrier mobility 15,000-60,000 cm2 /Vsknown to be improved.
Transition metal chalcogenides such as sulfur and a chalcogen and a transition metal and referred to as the atoms of the material film of the layered hexagonal boron nitride thin film may be increased by means of known characteristics could be improved.For example, of two hexagonal boron nitride thin film of molybdenum disulfide is disposed between the two-dimensional atoms, the carrier mobility at a low temperature of 10 K 34,000 cm2 /Vsto have been reported to be increased.Further, the underlying tungsten disulfide thin hexagonal boron nitride is placed, the intensity of the fluorescence intensity of tungsten disulfide, the half width of the emission peak can be greatly reduced have been reported.Is a silicon oxide substrate surface roughness and optical phonons, impurities in the surface charge, a two-dimensional atoms thereof on the substrate is a silicon oxide film leads to deterioration of characteristics of the material on the other hand, the hexagonal boron nitride thin film to such an effect can be shielded, electrically two-dimensional material, leading to significant improvement of optical characteristics.For this reason, a variety of atoms of the hexagonal boron nitride thin film of the film material as the insulating substrate is less than ideal.
Used in such applications the conventional thin-film substantially all of the hexagonal boron nitride, hexagonal boron nitride crystal grains of a small separation formed in the bulk are.Hexagonal boron nitride single crystal synthetic high temperature, high pressure are required, the hexagonal boron nitride thin film has been transferred is peeled off is very small size about 1 μm and about, the thickness and the shape is difficult to control.Therefore, the insulating film of the hexagonal boron nitride is very difficult as the industrial applications have been.
In such a situation, as an alternative to release of grains of a bulk crystal, a chemical vapor deposition (CVD) the surface of the substrate and a boron nitride film is formed by a method such as is proposed.
For example, in Patent Document 1, can be chemically dissolved a substrate made of a metal or metal compound on the surface and forming a single crystal structure, the raw material gas into contact with a CVD method to a thickness on the surface of the single crystal by the 1 h-BN as a one-atom to form a monolayer film has been proposed.
In addition, in Patent Document 2, a substrate made of a metal or metal compound to the surface, the surface roughness (Rmax) 5nmor less after polishing, the polished surface as a template, the surface of the substrate thickness of 1-2 atomic layers or a mono-atomic layer 2 h-BN thin film made from a single atomic layer is formed has been proposed.
In addition, in Patent Document 3, the graphene layer on a semiconductor substrate relates to a method of forming, between the substrate and the graphene layer can include a boron nitride layer has been described, the boron nitride layer, a single layer or a mono-atomic layer 2 one or more of boron nitride having a thickness of the layer sequence of layers has been described.In addition, in Patent Document 3, a metal film on the surface of the semiconductor substrate is formed, the graphene and boron nitride layer, the metal film surface of the semiconductor substrate can be formed between the front and back have been described.
Scope of claims (In Japanese)請求の範囲
[請求項1]
 厚さが1nm以上であり、ラマンスペクトルにより得られるE 2gピークの半値幅の平均値が9~20cm -1である六方晶窒化ホウ素薄膜。
[請求項2]
 光学顕微鏡によって得られるRGB画像のG成分の強度分布の変動係数が5%以下である請求項1に記載の六方晶窒化ホウ素薄膜。
[請求項3]
 前記G成分の強度分布が単峰性を示す請求項2に記載の六方晶窒化ホウ素薄膜。
[請求項4]
 厚さが1nm以上、50nm以下である請求項1~3のいずれか一項に記載の六方晶窒化ホウ素薄膜。
[請求項5]
 3層以上の層からなる請求項1~3のいずれか一項に記載の六方晶窒化ホウ素薄膜。
[請求項6]
 請求項1~5のいずれか一項に記載の六方晶窒化ホウ素薄膜の製造方法であって、
 金属薄膜の表面にホウ素原子、窒素原子、またはホウ素原子と窒素原子の両方を含む原料ガスを接触させることによりこの金属薄膜の表面上に厚さが1nm以上の窒化ホウ素の膜を生成する工程を含み、
 前記金属薄膜が、2つ以上の元素を主成分元素として含む六方晶窒化ホウ素薄膜の製造方法。
[請求項7]
 前記金属薄膜が、NiとFe、CoとFe、またはCrとFeを主成分元素として含む、請求項6に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項8]
 前記金属薄膜がNiとFeを主成分元素として含み、前記金属薄膜の表面が面心立方格子の(111)面、(100)面、または(110)面を有する、請求項7に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項9]
 前記金属薄膜がNiを10%以上含む、請求項8に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項10]
 化学気相成長(CVD)法により六方晶窒化ホウ素薄膜を形成する、請求項6~9に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項11]
 ホウ素原子または窒素原子を含む第二の原料ガスをさらに供給する、請求項10に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項12]
 厚さが1nm以上、50nm以下の六方晶窒化ホウ素薄膜を形成する、請求項6~11のいずれか一項に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項13]
 3層以上の層からなる六方晶窒化ホウ素薄膜を形成する、請求項6~11のいずれか一項に記載の六方晶窒化ホウ素薄膜の製造方法。
[請求項14]
 請求項1~5のいずれか一項に記載の六方晶窒化ホウ素薄膜を含む積層体。
[請求項15]
 請求項14に記載の積層体を用いた薄膜トランジスタ。
[請求項16]
 請求項15に記載の薄膜トランジスタを備える電子デバイス。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • AGO Hiroki
  • KAWAHARA Kenji
  • UCHIDA Yuki
  • NAKANDAKARI Sho
  • TANAKA Daichi
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Reference ( R and D project ) PRESTO Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers AREA
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