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TIME-RESOLVED PHOTOEMISSION ELECTRON MICROSCOPE DEVICE AND METHOD FOR ACQUIRING CARRIER DYNAMICS IMAGE USING SAID DEVICE NEW

外国特許コード F180009529
整理番号 (S2017-0249-N0)
掲載日 2018年11月2日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP004734
国際公開番号 WO 2018159272
国際出願日 平成30年2月9日(2018.2.9)
国際公開日 平成30年9月7日(2018.9.7)
優先権データ
  • 特願2017-037139 (2017.2.28) JP
発明の名称 (英語) TIME-RESOLVED PHOTOEMISSION ELECTRON MICROSCOPE DEVICE AND METHOD FOR ACQUIRING CARRIER DYNAMICS IMAGE USING SAID DEVICE NEW
発明の概要(英語) This time-resolved photoemission electron microscope device has a laser light source (1) for repeated variable frequency output of pulses having a pulse width at the femtosecond level or lower, a pump light generation unit for subjecting the light output from the laser light source to wavelength conversion and thereby generating pump light (8) for exciting photocarriers of a sample, and a probe light generation unit for subjecting the light output from the laser light source to wavelength conversion and thereby generating probe light (7) for causing the photocarriers excited by the pump light to be emitted from the sample through the photoelectric effect. At least one from among the energy of the pump light and probe light is continuously variable.
従来技術、競合技術の概要(英語) BACKGROUND ART
Repetition frequency, wavelength and pulse laser light is fixed to the electron microscope is used as an excitation light source, the pump, probe method to observe the behavior of electrons in the metal material in accordance with the method already proposed (see non-patent document 1).On the other hand, unlike the metal material, a high resistance semiconductor materials and the insulator can be directly observe the behavior of electrons in the development of devices has been strongly requested.Femtosecond scale in order to achieve high temporal resolution, the pulse width of femtosecond level necessary to use a femtosecond pulse laser.Femtosecond pulsed laser is irradiated to the sample and, in the sample instantaneously generated an electron deficient and therefore the sample is charged, electron microscopy and electron microscopy imaging of the observation apparatus such as carrier dynamics is not easy to make.
Femtosecond pulsed laser of the pulse of the photon density can be reduced by irradiating the femtosecond pulsed laser in the influence of charging of the sample can be reduced.However, a femtosecond pulse laser in the case where the pulse of the photon density is reduced, and may lead to a long measurement time, the ratio of signal to noise ratio (signal-noise ratio,SN) may become low.
In order to solve the above problems, the inventors of the present invention, a variable repetition frequency femtosecond pulse laser light source and the pump-probe method and a combination of electron microscopy and time-resolved electron microscopy device (see Patent Document 1) has been proposed.Patent Document 1 described in the electron microscope, it is possible to prevent the charge of the sample thus, the dynamics of the carrier in the semiconductor, a high time resolution and high spatial resolution can be observed.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
  • 発明者(英語)
  • KOSHIHARA SHINYA
  • FUKUMOTO KEIKI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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