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ELECTRONIC CIRCUIT, IMAGING CIRCUIT, AND DETECTION/LIGHT-RECEPTION METHOD NEW

外国特許コード F180009539
整理番号 (S2017-0257-N0)
掲載日 2018年11月2日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP041287
国際公開番号 WO 2018131288
国際出願日 平成29年11月16日(2017.11.16)
国際公開日 平成30年7月19日(2018.7.19)
優先権データ
  • 特願2017-002089 (2017.1.10) JP
発明の名称 (英語) ELECTRONIC CIRCUIT, IMAGING CIRCUIT, AND DETECTION/LIGHT-RECEPTION METHOD NEW
発明の概要(英語) The present invention provides a pixel circuit capable of handling terahertz waves and visible light without an increase in circuit scale. In the present invention, a switch transistor M9 and photodiode PD are connected to the gate terminal of a bias transistor M2 of a cascode-type amplifier for terahertz wave detection. The input of the cascode-type amplifier is used as a bias. A negative feedback amplifier 4 for offset adjustment receives offset output of a power supply voltage VDD. A second output signal Sp2 corresponding to the intensity of visible light is output from a connection point between transistor M2 and transistor M3.
従来技術、競合技術の概要(英語) BACKGROUND ART
In recent years, millimeter wave and the far-infrared light at a frequency between the terahertz band (100 giga-hertz terahertz-10) for a terahertz wave having a frequency of active research and development has been performed.This detecting the terahertz wave is converted into an electric signal and for, the physical quantity which is converted into an electrical signal of the terahertz wave element is required.More specifically for example, the terahertz wave is converted to heat, the heat resistance caused by the change in the value of the read element (for example, bolometer) is required.
At this time, the inventors of the present invention, in the following Non-Patent Document 1, a frequency lower than the operating frequency of the terahertz wave includes a transistor having a negative feedback differential amplification circuit, the intensity of the terahertz wave and the envelope component corresponding to the amplified output signal to an appropriate offset to the output circuit is proposed.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
  • 発明者(英語)
  • IKEBE MASAYUKI
  • SANO EIICHI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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