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STRUCTURE AND PRODUCTION METHOD THEREFOR NEW

外国特許コード F180009582
整理番号 (K040P18)
掲載日 2018年11月6日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP002459
国際公開番号 WO 2018139579
国際出願日 平成30年1月26日(2018.1.26)
国際公開日 平成30年8月2日(2018.8.2)
優先権データ
  • 特願2017-013478 (2017.1.27) JP
発明の名称 (英語) STRUCTURE AND PRODUCTION METHOD THEREFOR NEW
発明の概要(英語) Provided are: a structure with high photocatalytic activity; and a production method therefor. The structure of an embodiment is characterized in that: the structure is provided with a first metal compound with a first crystal structure and a second metal compound layer which is located on the surface of the first metal compound and has a second structure that differs from the first crystal structure; and, in time-resolved spectroscopy measured 5 µs after laser pulse irradiation, the maximum value of super-absorption intensity for the first metal compound, which has the second metal compound layer on the surface thereof, in the 1000 cm-1 to 20000 cm-1 wavenumber range is in the 1000 cm-1 to 8000 cm-1 wavenumber range and the ratio of said maximum super-absorption intensity with respect to the super-absorption intensity at wavenumber 15000 cm-1 is at least 10 fold.
従来技術、競合技術の概要(英語) BACKGROUND ART
(TiO2) is titanium oxide, a photocatalytic activity by irradiation with the excitation light has been known to express.Including titanium oxide and the metal oxide or metal oxynitride, metal nitrides, metal sulfides and the like having a photocatalytic activity of the metal compound, used in various fields.
On the surface of a metal compound such as this, oxygen defects or introduces nitrogen defects, the defect of sulfur, metal defects, and defects present in the metal insert.Defects in the vicinity of atoms, excited electrons and holes photogenerated carrier is captured and the like, react with the electrons and holes in the activity.Also, the recombination rate of electrons and holes can be increased, the light is a problem that the decrease in catalytic activity.
In order to improve the photocatalytic activity and a variety of proposals have been made, for example in Patent Document 1, for water splitting in the photo-electrode, n-type semiconductor comprising the surface of the catalyst layer, a coating layer including the p-type semiconductor is provided in an electrode, the onset potential is improved have been described.
Patent Document 2 is, different types of nanoclusters to the surface of the semiconductor 2 (amorphous oxide nanoclusters (A) and (B) an oxide nanoclusters) can be carried by, significant action expression and a photocatalyst material is described.
Is the non-patent document 1, the photocatalyst structure of the carrier excited by the defect on the trap level becomes deeper, light catalytic activity is reduced, the trap level of the excited carrier can be assessed by a transient absorption spectrum have been described.In addition, (SrTiO 3) strontium titanate particles (strontium chloride (SrCl2) ) of the molten salt in (flux treatment) and heated, re-crystallization, crystal defects of the strontium titanate particles can be reduced, and the shallow trap level of carrier, and improve the photocatalytic activity can be described.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • YAMAKATA AKIRA
  • JUNIE JHON MAGDADARO VEQUIZO
  • CHANDANA SAMPATH KUMARA RANASINGHE
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) PRESTO Chemical conversion of light energy AREA
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