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HEAT-RADIATING LIGHT SOURCE

Foreign code F180009629
File No. 5334
Posted date Nov 20, 2018
Country WIPO
International application number 2017JP005160
International publication number WO 2017150160
Date of international filing Feb 13, 2017
Date of international publication Sep 8, 2017
Priority data
  • P2016-037217 (Feb 29, 2016) JP
Title HEAT-RADIATING LIGHT SOURCE
Abstract A heat-radiating light source 10 is equipped with: a laminate (10S) obtained by laminating m (where m is an integer of 2 or more) quantum well structure layers (111, 112), and having provided thereto n-layers (121, 122) comprising an n-type semiconductor and a p-layer (13) comprising a p-type semiconductor, so as to sandwich each quantum well structure layer from both sides in the laminating direction; voltage applying means (151, 152) that apply a voltage that transfers a charge to the n-layers or the p-layer within the quantum well of the quantum well structure layers, and that is directly or indirectly connected to the n-layers and p-layer that sandwich the m quantum well structure layers; voltage switching means (161, 162, 17) that switch the application of voltage to each of the m quantum well structure layers on and off; and a photonic crystal part (20) in which light having m types of wavelengths, which correspond to transition energy between sub-bands in the quantum wells, resonate, said m types of wavelengths being generated one type at a time from each of the m quantum well structure layers, and which is provided within the laminate or adjacent to said laminate. The heat-radiating light source 10 is capable of generating a plurality of wavelengths by switching therebetween one wavelength at a time at high speed.
Outline of related art and contending technology BACKGROUND ART
The light source is thermal radiation, not only provides heat to the object light can be obtained, has an advantage. The light source is thermal radiation, for example using infrared rays can be used as a light source of the various sensors, in particular, to analyze the components in the engine exhaust gas sensor, the sensing area of the waste heat of the engine is converted to the infrared can be used suitably as a light source.
The electromagnetic waves emitted by the object is heat is supplied, the temperature-dependent wavelength range having a spectrum spreading. °C hundreds of several tens of °C - for example the object can be obtained by heating the wavelength of the electromagnetic waves and the range of several tens µm µm -, the temperature thereof increases, the range is spread in the short wavelength side. However, the infrared sensor of the above-specified generally 1 or more wavelengths of the order to use only the infrared, such thermal radiation light source is used, unnecessary infrared rays other than the specific wavelength is irradiated so that the object to be measured, such as that the heating the object to be measured may be an adverse effect. In addition, is input to the electrical energy generated in the case where the thermal radiation, the broadband radiation is generated with the light source becomes a problem in that an increase in power consumption.
To solve this problem, in Patent Document 1, within the photonic crystal in the quantum well structure is formed of a thermal radiation light source is proposed. The photonic crystal is a, a periodic refractive index distribution of the compound, which corresponds to the standing wave with a specific wavelength is adapted to be formed. The photonic crystals, mainly due to the plate member in Patent Document 1 have different refractive indexes and the substrate refractive index area is an area (typically air holes) are periodically provided to be used, a columnar shape (in air) on the base member (modified refractive index member) by the arrangement of, on the base portion of the (air and the modified refractive index member) may be used as a photonic crystal. And the quantum well structure, multiple different types of the magnitude of the energy band gap, on the order of several tens of nm thickness of several nm - by laminating a semiconductor layer (quantum well) of the energy potential well formed as the structure of.
The heat radiation light source, heat from the heat source is supplied, the quantum wells of the quantum well structure is formed in a number of discrete energy level (subband) transition between (intersubband transition) occurs, the center wavelength corresponding to the energy transition in a finite bandwidth of light emission is generated. Then, the quantum well structure is provided in the photonic crystal, the period of the photonic crystal 1 is determined by the resonance with two wavelengths so as to be amplified, one wavelength in the 1 light having a wavelength spectrum having a sharp peak is generated.
The heat radiation light source and may further include, for applying a voltage to quantum well structures of the electrode is provided. By ON/OFF of this applied voltage, the quantum well to change the number of electrons or holes, whereby the intensity of light on the above-described specific wavelength can be controlled.
Scope of claims (In Japanese)請求の範囲 [請求項1]
 a) 量子井戸構造を有する層である量子井戸構造層がm枚(mは2以上の整数)積層され、各量子井戸構造層を積層方向の両側から挟むようにn型半導体から成る層であるn層及びp型半導体から成る層であるp層が設けられた積層体と、
 b) 前記m個の量子井戸構造層の各々において、該量子井戸構造層を挟む前記n層及び前記p層に直接又は間接的に接続された、該量子井戸構造層の量子井戸内の電荷を前記n層又は前記p層に移動させる電圧を印加する電圧印加手段と、
 c) 前記m個の量子井戸構造層の各々への前記電圧の印加のON/OFFを切り替える電圧切替手段と、
 d) 前記積層体内又は該積層体に隣接して設けられた、前記m個の量子井戸構造層の各々から該量子井戸構造層の量子井戸におけるサブバンド間の遷移エネルギーに対応して1種類ずつ生じる合計m種類の波長の光がいずれも共振するように形成されているフォトニック結晶部と
を備えることを特徴とする熱輻射光源。

[請求項2]
 前記mが2であることを特徴とする請求項1に記載の熱輻射光源。

[請求項3]
 前記積層体及び前記フォトニック結晶部が一体で構成されていることを特徴とする請求項1又は2に記載の熱輻射光源。

[請求項4]
 前記フォトニック結晶部が、前記積層体と、該積層体の各層を貫くように積層方向に設けられ、前記量子井戸構造層、前記n層及び前記p層に平行に周期的に配置された空孔から成ることを特徴とする請求項3に記載の熱輻射光源。

[請求項5]
 前記積層体において、第1半導体層、第1の前記量子井戸構造層である第1量子井戸構造層、第2半導体層、第2の前記量子井戸構造層である第2量子井戸構造層、及び第3半導体層がこの順で積層されており、
 前記第1半導体層及び前記第3半導体層が前記n層及び前記p層のいずれか一方であって、前記第2半導体層が前記n層及び前記p層のうち前記第1半導体層及び前記第3半導体層のものとは異なる方であり、
 前記第1半導体層及び前記第3半導体層に前記電圧印加手段が接続されている
ことを特徴とする請求項1~4のいずれかに記載の熱輻射光源。

[請求項6]
 a) 量子井戸構造を有する層である量子井戸構造層がm枚(mは2以上の整数)積層され、各量子井戸構造層を積層方向の両側から挟むようにn型半導体から成る層であるn層及びp型半導体から成る層であるp層が設けられた積層体と、
 b) 前記積層体内又は該積層体に隣接して設けられた、前記m個の量子井戸構造層の各々から前記遷移エネルギーに対応して1種類ずつ生じる合計m種類の波長の光がいずれも共振するように形成されているフォトニック結晶部と
を備えることを特徴とする熱輻射光源用素子。

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KYOTO UNIVERSITY
  • Inventor
  • NODA, Susumu
  • INOUE, Takuya
  • JI, Anqi
  • ASANO, Takashi
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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