TOP > 外国特許検索 > COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SAME

COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SAME NEW

外国特許コード F190009711
整理番号 AE06-02WO
掲載日 2019年1月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP021122
国際公開番号 WO 2018221711
国際出願日 平成30年6月1日(2018.6.1)
国際公開日 平成30年12月6日(2018.12.6)
優先権データ
  • 2017JP20513 (2017.6.1) WO
  • 特願2018-041338 (2018.3.7) JP
発明の名称 (英語) COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SAME NEW
発明の概要(英語) The present invention provides a low-resistance nitride compound semiconductor which has been difficult to manufacturing in the past. Furthermore, high electron mobility is shown, and therefore it is possible to configure a high-performance semiconductor device. According to the present invention, using a pulse sputtering method under a processing atmosphere of room temperature to 700°C makes it possible to perform film formation on a large-area substrate, and to provide with excellent productivity an n-type electrically conductive group-13 nitride semiconductor having a mobility of 70-140 cm2/(V•S).
従来技術、競合技術の概要(英語) BACKGROUND ART
Such as GaN or InN device 13 using the group III nitride semiconductor have been widely used.Conventionally, such the crystal growth of the group III nitride semiconductor 13, MOCVD method or MBE method is used.However, the temperature of the MOCVD method is more than 1000°C is required in processes.Of the compound semiconductor at a low temperature MBE method can be formed, the film forming area can be a limit on the high and the production cost is not directed to mass production.
In addition, in the MBE method, a high concentration of donor is added, the crystal structure generated in a forbidden band in the vicinity of the conduction band of the high-concentration donor level due to the absorption is generated.Therefore, the compound semiconductor film decreases the transparency of the problem.For this reason, the production of a compound semiconductor, a nitride semiconductor is mainly a practical production, the MOCVD method is used (Non-Patent Document 1).
Current, high breakdown voltage with low on-resistance of the next generation having the characteristics of the electronic device is demanded.For this purpose, a ternary 2, ternary 3 or ternary compound semiconductor 4, more specifically, the group III nitride compound semiconductor 13 for realizing a semiconductor device is demanded.For this purpose, the compound semiconductor crystal of high quality and further, a doping technique of the refinement is obtained.In particular, GaN is formed on the substrate in the vertical type power device, the carbon concentration of the n-type drift layer and the reduction, there is an urgent need to improve the electron mobility.The following prior art documents can be increased.
Is Patent Document 1, copper metal nitride buffer layer on the substrate, the semiconductor layer is provided with a semiconductor element is disclosed.
Patent Document 2 is, in a thickness of 10-100μm, sintered polymer, heat-resistant flexible graphite substrate provided on the buffer layer and the HfN, GaN buffer layer provided on the semiconductor substrate and a semiconductor layer of the disclosed embodiments.In addition, in Patent Document 3, III-V substrate ZnO group III-V compound semiconductor is epitaxially grown by a method of manufacturing.
Patent Document 4 and Patent Document 5 relates to a nitride semiconductor 0167 will be described in the following paragraphs herein.Then, the Patent Document 6, PCT patent application will be described later (PCT/JP2017/020513 by the present applicant) of the international search report in the prior art cited.Si concentration may be increased to 2x10E+20/cm3, the roughness of the AlGaN film does not occur in the experimental result is disclosed (Fig. 4).
Then, the non-patent document 1 is described above, n-type GaN is formed using MOCVD of the semiconductor layer disclosed in the research on physical properties.P-type GaN is non-patent document 2 and the contact resistance of the semiconductor layer disclosed in the research on.Is the non-patent document 3, the InGaN-based LED element in the p-type GaN grown at low temperature is produced in the PSD method disclosed in the research.Is the non-patent document 4, the electron mobility in silicon and the doping concentration of the research is disclosed.
Is the non-patent document 5, the carrier mobility in the GaN of the model of the research are disclosed.Is in Non-Patent Document 6, p-type GaN is formed on the PSD method for the evaluation of the research relating to the contact resistance has been disclosed.Is the non-patent document 7, the LED is formed on the glass in the experiment example has been disclosed.Is the non-patent document 8, using the PSD method for the growth of a nitride single crystal has been disclosed in the research.Is the non-patent document 9, a very low on-resistance of the Ge-doped GaN normally-off type transistor is disclosed.
Is the non-patent document 10, Si-doped AlGaN with a low resistance of the high carrier concentration has been disclosed in the research.Is the non-patent document 11, the concentration of Si 1034cm2/2x 1016cm-3 mobility (V, S) is disclosed in an experimental example.Is the non-patent document 12, the Ge-doped GaN of the PSD method for the epitaxial growth film has been disclosed.Is the non-patent document 13, Ge and Si-doped n-type GaN to provide new physical properties has been disclosed in detail.Finally, the non-patent document 14, high-quality nitride semiconductor by a sputtering method and the formation of the research relating to the application to a device have been reported.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • FUJIOKA Hiroshi
  • UENO Kohei
国際特許分類(IPC)
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close