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SENSOR AND METHOD FOR MANUFACTURING SENSOR NEW 新技術説明会

外国特許コード F190009751
整理番号 (170035JP01,S2017-0740-N0)
掲載日 2019年5月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP023039
国際公開番号 WO 2018230736
国際出願日 平成30年6月15日(2018.6.15)
国際公開日 平成30年12月20日(2018.12.20)
優先権データ
  • 特願2017-118167 (2017.6.15) JP
発明の名称 (英語) SENSOR AND METHOD FOR MANUFACTURING SENSOR NEW 新技術説明会
発明の概要(英語) In order to provide a sensor using a surface plasmon polariton excitation structure, the present invention provides a sensor which is provided with: a substrate; a ferromagnetic layer provided on the substrate; a low refractive index layer that is provided on the ferromagnetic layer and that includes a space through which a substance to be measured flows; and a high refractive index layer that is provided on the low refractive index layer and that has a higher refractive index than the low refractive index layer. In addition, the present invention provides a method for manufacturing the sensor, the method including: preparing a substrate; providing a ferromagnetic layer on the substrate; providing, on the ferromagnetic layer, a low refractive index layer that includes a space through which a substance to be measured flows; and providing, on the low refractive index layer, a high refractive index layer that has a higher refractive index than the low refractive index layer.
従来技術、競合技術の概要(英語) BACKGROUND ART
Conventionally, a sensor utilizing the structure of the excited surface plasmon polariton has been known (for example, see Patent Document 1). No. 2011/142118 Patent Document 1 International Publication
Problem to be solved
And utilizing the structure of the surface plasmon polariton excitation, the higher-sensitivity sensor is required.
General disclosure
1 In the first embodiment of the present invention, the substrate, is provided over the substrate and the ferromagnetic layer, a ferromagnetic layer that is provided above, including the space for passing the target substance and the low refractive index layer, low refractive index layer provided on the top of, having a larger refractive index than the low refractive index layer and high refractive index layer to provide a sensor comprising.
2 In the first embodiment of the present invention, a semiconductor substrate is prepared, a ferromagnetic layer is provided over the substrate, the upper ferromagnetic layer, the target substance to pass through the low refractive index layer is provided including the space, the upper portion of the low refractive index layer, the low refractive index layer having a larger refractive index than the high refractive index layer to provide a manufacturing method of the sensor.
In addition, the above summary of the invention, all of the features of the present invention are not listed. In addition, sub-combinations of groups of these features, can be the invention.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
  • 発明者(英語)
  • SHIMIZU Hiromasa
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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