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Metal oxide mesocrystal, and method for producing same NEW 新技術説明会

外国特許コード F190009773
整理番号 J1023-02WO
掲載日 2019年5月7日
出願国 中華人民共和国
出願番号 201380071767
公報番号 104955771
出願日 平成25年12月2日(2013.12.2)
公報発行日 平成27年9月30日(2015.9.30)
国際出願番号 JP2013082345
国際公開番号 WO2014119117
国際出願日 平成25年12月2日(2013.12.2)
国際公開日 平成26年8月7日(2014.8.7)
優先権データ
  • 特願2013-017258 (2013.1.31) JP
  • 2013JP82345 (2013.12.2) WO
発明の名称 (英語) Metal oxide mesocrystal, and method for producing same NEW 新技術説明会
発明の概要(英語) A method for producing a metal oxide mesocrystal, which comprises a step of burning an aqueous precursor solution comprising at least one metal oxide precursor, an ammonia salt, a surfactant and water under the condition of 300 to 600 DEG C. The method enables the easy synthesis of various metal oxide mesocrystals. Also provided is a complexed mesocrystal comprising multiple metal oxides or multiple alloy oxides.
特許請求の範囲(英語) [claim1]
1. A manufacturing method, is a metal oxide introduction crystal manufacturing method, characterized in, comprising:
300 the-600 °C calcined under the conditions comprise one or two or more metal oxide precursor, ammonium salts, surfactants and water precursor solution step.
[claim2]
2. Manufacturing method according to claim 1, characterized in, the metal oxide precursor is a metal nitrate and/or metal fluoride salts.
[claim3]
3. The manufacturing method according to claim 1 or 2, characterized in, is ammonium NH4NO3.
[claim4]
4. Claim 1-3 manufacturing method according to any one of claims, characterized in, the surfactant is selected from anionic surfactants, cationic surfactants, amphoteric surfactants and nonionic surfactant composed of at least one.
[claim5]
5. Claim 1-4 manufacturing method according to any one of claims, characterized in, the metal oxide precursor and a surfactant precursor aqueous solution in a proportion of 1-1000:1 (molar ratio), ammonium salt and a surfactant in a proportion of 1-1000:1 (molar ratio).
[claim6]
6. A metal oxide introduction crystal, characterized in, through claim 1-5 introduction crystal manufacturing method according to any one metal oxide is obtained.
[claim7]
7. A crystal medium, characterized in, a specific surface area 0.5m by introduction crystal2/g or more, an average width 0.01-1000 µm transition metal (except titanium) oxide form.
[claim8]
8. A titanium oxide introduction crystal, characterized in, introduction crystal titanium oxide have an average width 400-1000 nm, a specific surface area 10m2/g or more.
[claim9]
9. A dielectric crystal, characterized in, introduction crystal comprises two or more metals.
[claim10]
10. Dielectric crystal according to claim 9, characterized in, a specific surface area 0.5m introduction crystal2/g or more.
[claim11]
11. Dielectric crystal according to claim 9 or 10, characterized in, introduction crystal of two or more of a metal oxide.
[claim12]
12. Dielectric crystal according to claim 11, characterized in, the metal oxide of two or more transition metal oxide.
[claim13]
13. Dielectric crystal according to claim 9 or 10, characterized in, by introduction crystal alloy oxide.
[claim14]
14. A composite material, characterized in, that the functional material according to any one claim 6-13 dielectric formed on the surface of the crystal layer.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAJIMA, Tetsuro
  • TACHIKAWA, Takashi
  • BIAN ZHENFENG
国際特許分類(IPC)
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