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METHOD FOR MANUFACTURING LAYERED STRUCTURE OF MAGNETIC BODY AND BiSb, MAGNETORESISTIVE MEMORY, AND PURE SPIN INJECTION SOURCE NEW

外国特許コード F190009808
整理番号 (S2017-0902-N0)
掲載日 2019年5月8日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP034191
国際公開番号 WO 2019054484
国際出願日 平成30年9月14日(2018.9.14)
国際公開日 平成31年3月21日(2019.3.21)
優先権データ
  • 特願2017-177564 (2017.9.15) JP
発明の名称 (英語) METHOD FOR MANUFACTURING LAYERED STRUCTURE OF MAGNETIC BODY AND BiSb, MAGNETORESISTIVE MEMORY, AND PURE SPIN INJECTION SOURCE NEW
発明の概要(英語) A cell 2 of a magnetoresistive memory is provided with: a MTJ element 10 including a magnetization free layer 12; and a pure spin injection source 20. The pure spin injection source 20 includes a BiSb layer connected to the magnetization free layer 12. Magnetization reversal of the magnetization free layer 12 is enabled by applying an in-plane current to the BiSb layer.
従来技術、競合技術の概要(英語) BACKGROUND ART
In recent years, the development of low power consumption non-volatile memory and has been actively carried out, the magnetic resistance memory (MRAM) is among the very promising. In addition to the non-volatile MRAM, 10ns-class high-speed operation, extremely high durability (number of times of writing 1016 or more times) or the like, very excellent characteristics. Therefore, the main memory as well as the MRAM, if a built-in in a nonvolatile memory integrated circuit, the power consumption of the integrated circuit 9 by the effect of power gating can be reduced and the expected interrupt.
The first generation of MRAM memory element (MTJ: magnetic tunnel junction) is, the magnetization reversal method is used by the magnetic field. However, the magnetization reversal by magnetic field energy consumption is large. 2000 Year of the second-generation base as a writing technique, the spin injection magnetization inverting method has been developed, been put into practical use from the year 2012. In the spin injection magnetization reversing technique, the pinned magnetic layer of the MTJ element free from the spin-polarized current is injected into the magnetic layer, the spin transfer torque (STT: by Spin transfer torque), to cause the magnetization reversal. STT-MRAM uses this technique is referred to as MRAM. In the spin injection magnetization reversal, the next spin of the spin-polarized current is injected by a IS. IS is the spin of the spin angular momentum per unit time of a certain flow rate. IS=PIhbar (hbar/2e): Planck's constant h/2 π e: elementary charge I: current P: spin polarization of the magnetic electrode material
P 1 and the upper limit of the, usually on the order of P-0.5. As can be seen from this equation, the spin injection magnetization reversal technique, a spin current does not exceed I (hbar/2e). This is, each of the spin angular momentum of the electrons not only carry hbar/2 is the physical limit in some cases. And the MRAM is a non-volatile, does not consume energy during the standby, when the data is written to the memory such as SRAM 1 orders of magnitude greater than the energy consumption is still a problem remains. In addition, a large write current required for the driving transistor is large, it is difficult to increase the storage capacity of the MRAM.
Fig. 1 is, the magnetization reversal method using a pure spin current with an embodiment of the present invention. The ferromagnetic layer a material having a strong spin-orbit interaction which are connected to each other. The current I is passed through this layer, a pure spin current IS flows in the vertical direction. Such a phenomenon is referred to as the spin Hall effect. Pure spin current density J between JS and the current density (hbar/2e) JS=, the following relationship that θ shJ. Here, θ sh is the intensity of the spin-orbit interaction is a parameter that reflects, referred to as the spin Hall angle. As a result, the current Is between the pure spin current I, the following relationship is established. IS=(hbar/2e), θ shI (L/tN)
That is, each electron is effectively, (L/tN) θ sh of the spin can be generated. If, (L/tN) can be achieved in the θ sh ≫ 1, the conventional spin injection magnetization reversal of the magnetization reversal by a spin current-pure than seen in the efficiency. In the normal (L/tN) for-5-10, 1 θ sh>spin Hall material can be used as long as the, the current required to invert the magnetization of the MRAM element 1 can be reduced and the power magnitude. Further, the pure spin injection magnetization reversal method, the magnetization inversion at high speed can be around 1 digits, 2 digits of the write energy can be reduced. In the spin Hall effect by the spin injection MRAM using the spin-orbit pure SOT(Spin-orbit-torque) MRAM referred to as torque.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • PHAM NAM HAI
  • NGUYEN HUYNH DUY KHANG
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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