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Memory device

外国特許コード F190009809
整理番号 E104P08TW
掲載日 2019年5月9日
出願国 台湾
出願番号 106128447
公報番号 201825384
出願日 平成29年8月22日(2017.8.22)
公報発行日 平成30年7月16日(2018.7.16)
優先権データ
  • 特願2016-162048 (2016.8.22) JP
発明の名称 (英語) Memory device
発明の概要(英語) A memory device of the present application includes a semiconductor unit, a first insulating layer, a charge conservation layer, a second insulating layer, and an electrode in order, wherein the charge conservation layer mainly includes a nanocluster having a predetermined number of atoms.
特許請求の範囲(英語) [claim1]
1. Kinds of memory modules, the department has the semiconductor department, the 1st insulating layer and electric charge in order maintains the level, the 2nd insulating layer and electrode, the above electric charge maintains the level mainly contains the specific atomicity nano group variety.
[claim2]
2. Like request item of 1 memory module, the above nano group variety separation disposes.
[claim3]
3. Like request item 1 or 2 memory modules, the above electric charge maintains the level institute contains in the nano group variety, the specific atomicity's nano group variety is over 5%.
[claim4]
4. Like request item 1 to threes any item of memory module, the above nano group variety is the metal, alloy, the metallic oxide, semiconductor and ceramics or its and other nano of group varieties compound.
[claim5]
5. Like request item 1 to fours any item of memory module, the constitution of unit above nano group variety contains to elect, from is constituted over one of by Au, Ag, Pt, Pd, Ti, Al, Ta, Mo and W the kind element groups.
[claim6]
6. Like request item 1 to five any item of memory module, the above nano group variety is Israeli M@Si expresses the intension metallic ion group variety.
[claim7]
7. Like request item 1 to six any item of memory module, the above nano group variety is Ta and Si the compound nano group variety, Ti and Si the compound nano group variety, Ru and Si the compound nano group variety, Lu and Si the compound nano group variety, Mo and Si the one of compound nano group variety, W and in Si compound nano group varieties any.
[claim8]
8. Like request item 1 to seven any item of memory module, the above nano group variety has the organic dentate in the surface.
[claim9]
9. Like request item of 8 memory modules, the above organic coordinate forms the monofilm based on the above nano group variety surface.
[claim10]
10. Like request item 8 or 9 memory modules, the above organic dentate has by chemical formula RnX expresses the structure, and in the above chemical formula, R is the alkyl group, allyl, the alkyne base, aryl residue, the olefin base, the silicon base, aralkyl or the alcoxyl silicon base, X for the sulfur, selenium, phosphorus and nitrogen, n is the natural number.
[claim11]
11. Like request item 8 to ten any item of memory module, has the nano of group variety above organic dentate is in one of Au25(SR)18, Au38(SR)24 and Au144(SR)60 any.
[claim12]
12. Like request item 1 to 11 any item of memory module, the above electric charge maintains the level has the nano of group variety membrane layered arrangement.
[claim13]
13. Like request item 1 to 12 any item of memory module, the above 2nd insulating layer package of fluoric resins.
[claim14]
14. Like request item 1 to 13 any item of memory module, the water-absorptivity of above 2nd insulating layer has not reached 0.02%, the oxygen has not reached by the coefficient 2.0×10-9cm3cm/cm2scmHg.
[claim15]
15. Like request item 1 to 14 any item of memory module, the above electric charge maintains in the level the areal recording density of nano group variety is 1×1012~3×1014 /cm2.
[claim16]
16. Like request item 1 to 15 any item of memory module, the above electric charge maintains the level has above nano group variety bringing about the separate electronic position.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKAJIMA Atsushi
  • TACHIDA Eika
  • WATANABE Yoshio
  • HIRATA Naoyuki
  • NEGISHI Yuichi
  • TSUNOYAMA Hironori
  • YOKOYAMA Takaho
国際特許分類(IPC)
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