TOP > 外国特許検索 > Compound semiconductor, method for manufacturing same, and nitride semiconductor

Compound semiconductor, method for manufacturing same, and nitride semiconductor NEW

外国特許コード F190009867
整理番号 AE06-01TW
掲載日 2019年7月29日
出願国 台湾
出願番号 106118290
公報番号 201825722
出願日 平成29年6月2日(2017.6.2)
公報発行日 平成30年7月16日(2018.7.16)
優先権データ
  • 特願2016-169994 (2016.8.31) JP
発明の名称 (英語) Compound semiconductor, method for manufacturing same, and nitride semiconductor NEW
発明の概要(英語) This compound semiconductor constitutes a high-performance semiconductor device by having a high electron concentration of 5*1019 cm-3 or more, and exhibiting an electron mobility of 46 cm2/V.s or more, and low electrical resistance. The present invention provides an n conductivity-type group 13 nitride semiconductor that can be film-formed at a temperature within a range from a room temperature to 700 DEG C on a substrate having a large area.
特許請求の範囲(英語) [claim1]
1. Kinds of chemical compound semiconductors, are includes the nitrogen and 13 races elements from an element 2 Yuan department that containing B, Al, Ga either the In group selects, 3 Yuan department or the chemical compound semiconductor of 4 Yuan department, includes 1×10 the 17cm over -3 oxygen to take the impurity, has 5×10 the 19cm over -3 electron concentrations, is the N electrical conductivity, the electronic mobility is above 46cm 2/V.s.

[claim2]
2. Like the request item of 1 chemical compound semiconductor, it takes Ga and N as the essential component.

[claim3]
3. Like request item of 2 chemical compound semiconductor, to the 405nm wave length region's light's absorbency index is 2000cm below -1.

[claim4]
4. Like request item of 2 chemical compound semiconductor, to the 450nm wave length region's light's absorbency index is 1000cm below -1.

[claim5]
5. Like request item 1 to fours any item of chemical compound semiconductor, the RMS value that by AFM-based the surface roughness determination is obtained is below 5.0nm.

[claim6]
6. Like request item 1 to fours any item of chemical compound semiconductor, to the contact resistance of N ohmic electrode metal for 1×10 -4Ωcm below -2.

[claim7]
7. Like request item 1 to fours any item of chemical compound semiconductor, as these 13 race elements, contains Ga, but also includes Al and/or In.

[claim8]
8. Like request item 1 to fours any item of chemical compound semiconductor, its includes Si as executing body (donor).

[claim9]
9. Like request item 1 to fours any item of chemical compound semiconductor, its includes Ge to take Shi Ti.

[claim10]
10. 1 contact structures, are using like the request item 1 and electrode connection to the fours any item of chemical compound semiconductor's leading electrical department.

[claim11]
11. 1 kinds of transistor units, have like the request 10 contact structures.

[claim12]
12. 1 kinds of transparent electrodes, the use like requested the item 1 to fours any item of chemical compound semiconductor.
The manufacture methods of 13.1 chemical compound semiconductors, the use pulse splashes to plate the law, under containing oxygen process gas environment, like the request item will carry on the membrane 1 to fours any item of chemical compound semiconductor.
The manufacture methods of 14.1 chemical compound semiconductors, it is when the manufacture methods of request item of 13 chemical compound semiconductors, will become the membrane the foundation plate temperature implements below 700℃.

[claim13]
15. 1 nitride semiconductors, it is includes the nitrogen, and from at least one kind of 13 race elements electrical conductivity that containing B, Al, Ga or the In group selects is the n nitride semiconductor, the electron concentration is 1×10 20cm over -3, and resistivity for 0.3×10 -3Ω.cm below.

[claim14]
16. Like request item of 15 nitride semiconductors, this electron concentration is 2×10 20cm over -3.

[claim15]
17. Like request item 15 or 16 nitride semiconductors, to the contact resistance of n ohmic electrode metal for 1×10 -4Ωcm below -2.

[claim16]
18. Like request item 15 or 16 nitride semiconductors, its include 1×10 the 17cm over -3 oxygen impurities.

[claim17]
19. Like request item of 18 nitride semiconductors, to the 405nm wave length region's light's absorbency index is 2000cm below -1.

[claim18]
20. Like request item of 18 nitride semiconductors, to the 450nm wave length region's light's absorbency index is 1000cm below -1.

[claim19]
21. Like request item 15 or 16 nitride semiconductors, the RMS value that by AFM-based the surface roughness determination is obtained is below 5.0nm.

[claim20]
22. Like request item 15 or 16 nitride semiconductors, this at least one kind of 13 race elements are Ga.

[claim21]
23. Like request item 15 or 16 nitride semiconductors, this nitride semiconductor includes in Si either Ge any one or both as executing the body impurity.

[claim22]
24. Like request item 15 or 16 nitride semiconductors, its resistivity for 0.2×10 -3Ω.cm above.

[claim23]
25. Like request item 15 or 16 nitride semiconductors, its resistivity for 0.15×10 -3Ω.cm above.

[claim24]
26. Like request item 15 or 16 nitride semiconductors, its resistivity for 0.1×10 -3Ω.cm above.

[claim25]
27. Like request item 15 or 16 nitride semiconductors, it is satisfied by the (a) electron concentration is 1×10 20cm -3, and resistivity for 0.3×10 -3Ω.cm, the (b) electron concentration is 3×10 20cm -3 and resistivity for 0.3×10 -3Ω.cm, the (c) electron concentration is 4×10 20cm -3 and resistivity for 0.15×10 -3Ω.cm, and (d) electron concentration is 9×10 20cm -3, and resistivity for 0.15×10 -3Ω.cm numerical range that 4 spots surround.

[claim26]
28. 1 contact structures, have like the request item of 18 nitride semiconductors as leading the electrical department.

[claim27]
29. 1 contact structures, have like the request item of 18 nitride semiconductors to take the electricity pole piece.

[claim28]
30. 1 kinds of transistor units, have like the request item 28 or 29 contact structures.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • FUJIOKA, HIROSHI
  • UENO, KOHEI
国際特許分類(IPC)
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close