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ELECTRODE MATERIAL FOR CAPACITOR 新技術説明会

外国特許コード F190009922
整理番号 G2018-007
掲載日 2019年9月18日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP032517
国際公開番号 WO 2019097815
国際出願日 平成30年8月28日(2018.8.28)
国際公開日 令和元年5月23日(2019.5.23)
優先権データ
  • 特願2017-220842 (2017.11.16) JP
発明の名称 (英語) ELECTRODE MATERIAL FOR CAPACITOR 新技術説明会
発明の概要(英語) Provided are a boron-doped nanodiamond having a large specific surface area and a high electrical conductivity, an electrode comprising the boron-doped nanodiamond, and a sensor or an electrical storage device that includes the electrode. The boron-doped nanodiamond is characterized by having a specific surface area of 110 m2/g or more and an electrical conductivity at 20°C of 5.0×10-3 S/cm or more. The boron-doped nanodiamond preferably has a median diameter of 200 nm or less. Additionally, the electrode is characterized by comprising the boron-doped nanodiamond.
従来技術、競合技術の概要(英語) BACKGROUND ART
An insulating diamond and boron is doped in high concentration (p-type semiconductor) and generate a hole, is applied to the electrically conductive metal has been known. Then, the high-concentration boron-doped diamond to boron doped diamond (BDD: Boron Doped Diamond) is, from the diamond and chemical stability at a high physical stability, as well as have excellent electrical conductivity, the boron doped diamond electrode comprising a wide potential window (electrolysis of water does not occur in the potential range) and has a small background current, compared with the electrode material of the noble metal or carbon or the like, electrochemical analysis and functional effective electrolysis has attracted attention as an electrode material.
The method of manufacturing the boron doped diamond, for example in Patent Document 1, boron and the diamond particles and an alkaline earth carbonate powder in the mixture, under pressurized conditions of 5.0-8.0GPa, 1300-1800 C. by heating at a temperature of, boron-doped diamond particles, a method of producing boron doped diamond particles is disclosed. However, the above-mentioned Patent Document 1 is average particle diameter of the boron doped diamond of 1-8μm and, a small specific surface area, of the electric storage device used as an electrode for it is difficult to secure sufficient capacitance was.
In addition, in Patent Document 2, boron nano-diamond particles under a hydrogen atmosphere in the heating at 700-1000 ° C., boron large specific surface area obtained is described. However, this method is the boron , still insufficient in terms of conductivity was at.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • DAICEL CORPORATION
  • TOKYO UNIVERSITY OF SCIENCE FOUNDATION
  • 発明者(英語)
  • KONDO Takeshi
  • AIKAWA Tatsuo
  • YUASA Makoto
  • MIYASHITA Kenjo
  • NISHIKAWA Masahiro
  • TEI Takahiro
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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