Top > Search of International Patents > ELECTRODE MATERIAL FOR CAPACITOR

ELECTRODE MATERIAL FOR CAPACITOR meetings

Foreign code F190009922
File No. G2018-007
Posted date Sep 18, 2019
Country WIPO
International application number 2018JP032517
International publication number WO 2019097815
Date of international filing Aug 28, 2018
Date of international publication May 23, 2019
Priority data
  • P2017-220842 (Nov 16, 2017) JP
Title ELECTRODE MATERIAL FOR CAPACITOR meetings
Abstract Provided are a boron-doped nanodiamond having a large specific surface area and a high electrical conductivity, an electrode comprising the boron-doped nanodiamond, and a sensor or an electrical storage device that includes the electrode. The boron-doped nanodiamond is characterized by having a specific surface area of 110 m2/g or more and an electrical conductivity at 20°C of 5.0×10-3 S/cm or more. The boron-doped nanodiamond preferably has a median diameter of 200 nm or less. Additionally, the electrode is characterized by comprising the boron-doped nanodiamond.
Outline of related art and contending technology BACKGROUND ART
An insulating diamond and boron is doped in high concentration (p-type semiconductor) and generate a hole, is applied to the electrically conductive metal has been known. Then, the high-concentration boron-doped diamond to boron doped diamond (BDD: Boron Doped Diamond) is, from the diamond and chemical stability at a high physical stability, as well as have excellent electrical conductivity, the boron doped diamond electrode comprising a wide potential window (electrolysis of water does not occur in the potential range) and has a small background current, compared with the electrode material of the noble metal or carbon or the like, electrochemical analysis and functional effective electrolysis has attracted attention as an electrode material.
The method of manufacturing the boron doped diamond, for example in Patent Document 1, boron and the diamond particles and an alkaline earth carbonate powder in the mixture, under pressurized conditions of 5.0-8.0GPa, 1300-1800 C. by heating at a temperature of, boron-doped diamond particles, a method of producing boron doped diamond particles is disclosed. However, the above-mentioned Patent Document 1 is average particle diameter of the boron doped diamond of 1-8μm and, a small specific surface area, of the electric storage device used as an electrode for it is difficult to secure sufficient capacitance was.
In addition, in Patent Document 2, boron nano-diamond particles under a hydrogen atmosphere in the heating at 700-1000 ° C., boron large specific surface area obtained is described. However, this method is the boron , still insufficient in terms of conductivity was at.
Scope of claims (In Japanese)[請求項1]
 比表面積が110m 2/g以上であり、且つ20℃における電気伝導度が5.0×10 -3S/cm以上であることを特徴とする、ホウ素ドープナノダイヤモンド。

[請求項2]
 メディアン径が200nm以下である、請求項1に記載のホウ素ドープナノダイヤモンド。

[請求項3]
 光源波長325nmのラマンスペクトルにおいて、1370~1420cm -1、及び1580~1620cm -1にバンドを有する、請求項1又は2に記載のホウ素ドープナノダイヤモンド。

[請求項4]
 請求項1~3の何れか1項に記載のホウ素ドープナノダイヤモンドを含む電極。

[請求項5]
 質量当たりの電気二重層容量が3F/g以上である、請求項4に記載の電極。

[請求項6]
 請求項4又は5に記載の電極を備えたセンサー。

[請求項7]
 請求項4又は5に記載の電極を備えた蓄電デバイス。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • DAICEL CORPORATION
  • TOKYO UNIVERSITY OF SCIENCE FOUNDATION
  • Inventor
  • KONDO Takeshi
  • AIKAWA Tatsuo
  • YUASA Makoto
  • MIYASHITA Kenjo
  • NISHIKAWA Masahiro
  • TEI Takahiro
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close