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LIGHT ABSORBING DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRODE NEW

外国特許コード F190009935
整理番号 (S2018-0225-N0)
掲載日 2019年10月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP047588
国際公開番号 WO 2019131640
国際出願日 平成30年12月25日(2018.12.25)
国際公開日 令和元年7月4日(2019.7.4)
優先権データ
  • 特願2017-248071 (2017.12.25) JP
発明の名称 (英語) LIGHT ABSORBING DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRODE NEW
発明の概要(英語) This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.
従来技術、競合技術の概要(英語) BACKGROUND ART
Light and the substance interact with a low probability. Therefore, light material for the interaction, various attempts have been made. For example, the resolution of the sensitivity of the biosensor or the like bio-imaging in order to improve, as a laser light used. In addition, the optical coupling of light energy such as solar cell or an artificial order to improve the conversion efficiency of, in order to absorb the light of the molecules and quantum dots may be arranged in high density, the thickness of the semiconductor in order to absorb light or has been made. However, in such a device, and increase the cost of raw materials, depending on the type of the semiconductor can be increased or a decline in the charge separation efficiency is a problem.
In such a situation, the interaction between the material of the light as a means to increase the probability of, the localized surface plasmon resonance and the metal nano-structure, the micro-resonator and to confine light, a photonic crystal micro, nano-structure has been attracting attention. In particular, to a device utilizing the localized surface plasmon resonance, a plurality of metal nano-structure (nano-particles) 2 disposed on the two-dimensional plane as well as high efficiency light can be collected from, the ten years has been studied actively. In recent years, oxide on the semiconductor substrate and a plurality of metal nano-structure is arranged, not only simply amplify light, injection of electrons into the semiconductor from the metal is promoted, generation of hydrogen in the synthesis of chemical reaction such as ammonia can have an effect of the plasmon can be reported.
However, a plurality of metal nanostructures is disposed on the surface of the semiconductor substrate only, light cannot be collected completely. Typically, a plurality of metal nanostructures disposed on the surface of the semiconductor substrate only, most of the light 50% is absorbed by the lower limit. In addition, in this case, the plasmon resonance wavelength of the light cannot be absorbed only. The shape of the semiconductor nano-rod structure, the nanotube structure, a two-dimensional honeycomb structure or the like and is changed to 3, carrying the metal nano-structure in that light absorption may increase the amount has been proposed. However, in this method, the apparent light-energy conversion efficiency is increased but, based on the plasmon resonance wavelength of the light is only effectively used, and in a wide wavelength range of light absorbed by the increase of internal quantum yield cannot be achieved.
Capable of absorbing light in a wide wavelength range as the light absorbing device, the gold thin film is formed on the dielectric layer, on or in the further plurality of metal nanostructures are disposed, a light-absorbing device is referred to as super absorber or have been reported (see Non-Patent Document 1). The light-absorbing device, the metal nano-structure through the dielectric layer immediately below the position of the gold thin film, the metal nano-structure of the plasmon and plasmon generated in the opposite phase is formed as a mirror image, in the metal nano-structure between the gold thin film and a plasmon in the plasmon ' image dipole interactions' strong near-field interaction to occur is referred to for, capable of absorbing light in a wide wavelength range considered (see Non-Patent Document 2). The light-absorbing device, since the focusing only on the light absorption layer, the metal nano-structure of the dielectric layer has been placed on, or fully embedded in the dielectric layer respectively. In addition, the light-absorbing device, the image dipole interactions are expected to use, to reduce the thickness of the dielectric layer must be considered.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • HOKKAIDO UNIVERSITY
  • 発明者(英語)
  • MISAWA, Hiroaki
  • SHI, Xu
  • UENO, Kosei
  • OSHIKIRI, Tomoya
  • SUN, Quan
  • SASAKI, Keiji
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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