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LIGHT ABSORBING DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRODE NEW_EN

Foreign code F190009935
File No. (S2018-0225-N0)
Posted date Oct 24, 2019
Country WIPO
International application number 2018JP047588
International publication number WO 2019131640
Date of international filing Dec 25, 2018
Date of international publication Jul 4, 2019
Priority data
  • P2017-248071 (Dec 25, 2017) JP
Title LIGHT ABSORBING DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRODE NEW_EN
Abstract This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.
Outline of related art and contending technology BACKGROUND ART
Light and the substance interact with a low probability. Therefore, light material for the interaction, various attempts have been made. For example, the resolution of the sensitivity of the biosensor or the like bio-imaging in order to improve, as a laser light used. In addition, the optical coupling of light energy such as solar cell or an artificial order to improve the conversion efficiency of, in order to absorb the light of the molecules and quantum dots may be arranged in high density, the thickness of the semiconductor in order to absorb light or has been made. However, in such a device, and increase the cost of raw materials, depending on the type of the semiconductor can be increased or a decline in the charge separation efficiency is a problem.
In such a situation, the interaction between the material of the light as a means to increase the probability of, the localized surface plasmon resonance and the metal nano-structure, the micro-resonator and to confine light, a photonic crystal micro, nano-structure has been attracting attention. In particular, to a device utilizing the localized surface plasmon resonance, a plurality of metal nano-structure (nano-particles) 2 disposed on the two-dimensional plane as well as high efficiency light can be collected from, the ten years has been studied actively. In recent years, oxide on the semiconductor substrate and a plurality of metal nano-structure is arranged, not only simply amplify light, injection of electrons into the semiconductor from the metal is promoted, generation of hydrogen in the synthesis of chemical reaction such as ammonia can have an effect of the plasmon can be reported.
However, a plurality of metal nanostructures is disposed on the surface of the semiconductor substrate only, light cannot be collected completely. Typically, a plurality of metal nanostructures disposed on the surface of the semiconductor substrate only, most of the light 50% is absorbed by the lower limit. In addition, in this case, the plasmon resonance wavelength of the light cannot be absorbed only. The shape of the semiconductor nano-rod structure, the nanotube structure, a two-dimensional honeycomb structure or the like and is changed to 3, carrying the metal nano-structure in that light absorption may increase the amount has been proposed. However, in this method, the apparent light-energy conversion efficiency is increased but, based on the plasmon resonance wavelength of the light is only effectively used, and in a wide wavelength range of light absorbed by the increase of internal quantum yield cannot be achieved.
Capable of absorbing light in a wide wavelength range as the light absorbing device, the gold thin film is formed on the dielectric layer, on or in the further plurality of metal nanostructures are disposed, a light-absorbing device is referred to as super absorber or have been reported (see Non-Patent Document 1). The light-absorbing device, the metal nano-structure through the dielectric layer immediately below the position of the gold thin film, the metal nano-structure of the plasmon and plasmon generated in the opposite phase is formed as a mirror image, in the metal nano-structure between the gold thin film and a plasmon in the plasmon ' image dipole interactions' strong near-field interaction to occur is referred to for, capable of absorbing light in a wide wavelength range considered (see Non-Patent Document 2). The light-absorbing device, since the focusing only on the light absorption layer, the metal nano-structure of the dielectric layer has been placed on, or fully embedded in the dielectric layer respectively. In addition, the light-absorbing device, the image dipole interactions are expected to use, to reduce the thickness of the dielectric layer must be considered.
Scope of claims (In Japanese)[請求項1]
 光反射層と、
 前記光反射層上に配置された誘電体層と、
 前記誘電体層上に配置された複数の金属ナノ構造体と、
 を有し、
 前記複数の金属ナノ構造体は、それぞれ、その一部が前記誘電体層内に埋め込まれており、残部が外部に露出している、
 光吸収デバイス。

[請求項2]
 前記複数の金属ナノ構造体は、光を照射されたときに局在表面プラズモン共鳴を発生させ、
 前記光反射層および前記誘電体層は、光を照射されたときにファブリ・ペロー共振器として機能する、
 請求項1に記載の光吸収デバイス。

[請求項3]
 前記ファブリ・ペロー共振器の共振波長は、前記局在表面プラズモン共鳴のピーク波長±当該ピークの半値幅の範囲内である、請求項2に記載の光吸収デバイス。

[請求項4]
 前記誘電体層と接触しているすべての金属ナノ構造体の合計体積に対する、その一部が前記誘電体層内に埋め込まれており、残部が外部に露出している前記金属ナノ構造体の体積の割合は、90%以上である、請求項1~3のいずれか一項に記載の光吸収デバイス。

[請求項5]
 請求項1~4のいずれか一項に記載の光吸収デバイスを含む、光電極。

[請求項6]
 光反射層としての金属層を準備する工程と、
 前記金属層の表面に第1誘電体層を形成する工程と、
 前記第1誘電体層の上に、複数の金属ナノ構造体を形成する工程と、
 前記第1誘電体層の上に、前記複数の金属ナノ構造体が完全に埋まらないように原子層堆積法により第2誘電体層を形成する工程と、
 を有する、光吸収デバイスの製造方法。

[請求項7]
 前記第2誘電体層を形成する工程では、前記複数の金属ナノ構造体の表面にヒドロキシル基を付加する表面処理を行うことなく、前記第1誘電体層の上に原子層堆積法により第2誘電体層を形成する、請求項6に記載の光吸収デバイスの製造方法。

[請求項8]
 前記第1誘電体層を形成する工程では、前記金属層の表面にヒドロキシル基を付加する表面処理を行った後に、前記表面処理をされた前記金属層の表面に原子層堆積法により第1誘電体層を形成する、請求項7に記載の光吸収デバイスの製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • HOKKAIDO UNIVERSITY
  • Inventor
  • MISAWA, Hiroaki
  • SHI, Xu
  • UENO, Kosei
  • OSHIKIRI, Tomoya
  • SUN, Quan
  • SASAKI, Keiji
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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