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PRESSURE DISTRIBUTION SENSOR NEW コモンズ 新技術説明会

外国特許コード F190009949
整理番号 (2017000348)
掲載日 2019年10月25日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP004038
国際公開番号 WO 2019151533
国際出願日 平成31年2月5日(2019.2.5)
国際公開日 令和元年8月8日(2019.8.8)
優先権データ
  • 特願2018-018015 (2018.2.5) JP
発明の名称 (英語) PRESSURE DISTRIBUTION SENSOR NEW コモンズ 新技術説明会
発明の概要(英語) The objective of the present invention is to provide a sheet-like pressure distribution sensor capable of accurately detecting even slight variations in very small pressures such as airflows. This sheet-like pressure distribution sensor measures a pressure distribution in a two-dimensional plane. The pressure distribution sensor is characterized by being provided with a measuring means for measuring strain in the vicinity of residual portions, with tongue-shaped portions of a flexible sheet body serving as cantilevers, wherein the flexible sheet body includes, in a matrix formation, a plurality of said tongue-shaped portions, formed by annularly punching out the flexible sheet body to provide said residual portions.
従来技術、競合技術の概要(英語) BACKGROUND ART
A piezoelectric element or a piezoelectric film sensor using a variety of industrial products used in the measurement apparatuses. Such a pressure sensor in a plane and arranged in the pressure distribution within the two-dimensional plane 2 can be measured with the pressure distribution sensor has been proposed. Further, such a pressure distribution of the sensor, a flexible sheet having flexibility and formed in the shape, the curved surface but only on a plane surface of a complicated shape for the given measurement of the pressure distribution, in addition, at the time of absorbing shock and pressure without breaking the pressure distribution sensor sheet and the like can be measured on have been proposed.
For example, in Patent Document 1, a matrix wiring on the film at the intersection of a given thin film transistor is formed, the conductive pressure-sensitive surface of the thin film transistor to form a pressure sensor device is disclosed. (PET) films such as polyimide or polyethylene terephthalate is used and the polymer film, the upper wiring and a thin film transistor can be used for the printing technique, a large area and can be implemented at low cost.
In addition, in Patent Document 2, the pressure at the intersection of the matrix wiring as a measuring point and a pressure sensor using pressure measurement sheet gait analysis device are disclosed. The pressure sensor, according to the magnitude of the applied pressure to change the electrical characteristics of the pressure sensitive layer and, inside the pressure-sensitive ink is filled in a layered structure, when pressure is applied to the surface and to decrease electrical resistance and the pressure element.
Incidentally, when an object touches a surface different from the pressure applied by, the air flow is such a case, the pressure applied is extremely small.
For example, in Patent Document 3, when the blowing of gas to the object tool to the tool for estimating the pressure applied to the object as a sensor, the cantilever support (support beam) using the strain gauge of the gas by measuring the load applied from the pressure sensor has been disclosed. Here, for the purpose of drying the object tool in a relatively strong air flow from the blower is provided to the target of measurement, a cantilever can be used in the measurement of the relatively small air flow will also be possible.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • KANAZAWA Shusuke
  • USHIJIMA Hirobumi
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) 産総研フレキシブルエレクトロニクス研究センター

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