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METHOD FOR PRODUCING PIEZOELECTRIC FILM NEW

外国特許コード F190009952
整理番号 (S2018-0202-N0)
掲載日 2019年10月25日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP000593
国際公開番号 WO 2019139100
国際出願日 平成31年1月10日(2019.1.10)
国際公開日 令和元年7月18日(2019.7.18)
優先権データ
  • 特願2018-002009 (2018.1.10) JP
発明の名称 (英語) METHOD FOR PRODUCING PIEZOELECTRIC FILM NEW
発明の概要(英語) The present invention provides a highly productive method for producing alkali niobate/tantalate alignment films, the method using hydrothermal synthesis and enabling the production of thicker films. The present invention also provides a piezoelectric body that uses this alignment film; and a functional device. A substrate is immersed in a water-containing solvent containing an alkali hydroxide and an amorphous niobium/tantalum oxide in a reactor, and heat and pressure is applied thereto, to deposit an alkali niobate/tantalate film having a perovskite-type crystal structure on the substrate. The niobium/tantalum oxide is a simple substance, solid solution, or mixture of niobium oxide and tantalum oxide, as represented by the average compositional formula (Nb1-xTax)2O5 (in the formula, 0 ≤ x ≤ 1), wherein these may be hydrates. The alkali niobate/tantalate film is a crystal containing alkali niobate/tantalate represented by the formula A(Nb1-xTax)O3 (in the formula, A is one or two or more alkali metals wherein any proportions may be used for the two or more alkali metals, and 0 ≤ x ≤ 1).
従来技術、競合技術の概要(英語) BACKGROUND ART
The piezoelectric actuator element, a pressure sensor, such as an ultrasonic transducer as well as widely used, recently applied to the vibration power generation device also has attracted attention. Are currently used as the piezoelectric (PZT) lead zirconate titanate is a main system, from the viewpoint of environmental load of the non-lead-based piezoelectric body has been investigated, among various non-lead-based piezoelectric body, having a perovskite structure is tantalum/niobium alkali-based piezoelectric material, an excellent piezoelectric characteristic, and the mechanical coupling has a high Curie temperature can be, the application of a strong candidate.
In addition, of the piezoelectric film of the prior art, mainly a chemical vapor deposition method, sputtering method or vapor phase processes, liquid phase of the sol-gel method is formed into a film by the processes, neither at a high temperature of 500°C or more to 1000°C or close to the film processing temperature (a sol-gel method in crystallizing the non-crystalline phase) is required. Therefore, the tantalum/niobium in an acid or an alkali-based piezoelectric material, having a high vapor pressure such as Na or K for the evaporation, a problem that the composition shift. On the other hand, in the hydrothermal synthesis method is used for the tantalum/niobium of less than 300°C alkali-based piezoelectric body film can be made in the processing temperature, evaporation of Na and K does not occur almost, a constant ratio of the obtained film having a composition of an advantage (Patent Document 1, Non-Patent Document 1).
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • SOPHIA SCHOOL CORPORATION
  • TOHOKU UNIVERSITY
  • UNIVERSITY OF YAMANASHI
  • 発明者(英語)
  • FUNAKUBO, Hiroshi
  • TATEYAMA, Akinori
  • ITO, Yoshiharu
  • SHIMIZU, Takao
  • ORINO, Yuichiro
  • KUROSAWA, Minoru
  • UCHIDA HIROSHI
  • SHIRAISHI, Takahisa
  • KIGUCHI, Takanori
  • KUMADA, Nobuhiro
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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