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UNIMOLECULAR TRANSISTOR NEW

外国特許コード F190009980
整理番号 J1035-02WO
掲載日 2019年10月28日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP007941
国際公開番号 WO 2019168124
国際出願日 平成31年2月28日(2019.2.28)
国際公開日 令和元年9月6日(2019.9.6)
優先権データ
  • 特願2018-038093 (2018.3.2) JP
発明の名称 (英語) UNIMOLECULAR TRANSISTOR NEW
発明の概要(英語) A unimolecular transistor according to the present invention includes: a first electrode having a first electrode layer and a first metal particle disposed at one end section of the first electrode layer; a second electrode having a second electrode layer and a second metal particle disposed at one end section of the second electrode layer; a third electrode insulated from the first electrode and the second electrode; and a π-conjugated molecule having a π-conjugated skeleton. The first electrode and the second electrode are disposed such that the first metal particle and the second metal particle face each other with a gap therebetween. The width from one end to the other end of each of the first metal particle and the second metal particle is 10 nm or less. The third electrode is disposed so as to be adjacent to the gap faced by the first metal particle and the second metal particle and so as to be separated from the first metal particle and the second metal particle. The π-conjugated molecule is disposed in the gap between the first metal particle and the second metal particle.
従来技術、競合技術の概要(英語) BACKGROUND ART
The semiconductor integrated circuit, along with the advancement of the microfabrication technology to develop significant. However, some of the problems with miniaturization are also actualized. For example, an increase in the offleak current caused by short-channel effect, thinning of the gate insulating film increases gate leakage and improve the operation speed in the structure limit, CMOS(Complementary Metal Oxide Semiconductor), an increase in power consumption, a high-density wiring and an increase in the parasitic capacitance due to the various problems have been noted.
Such limitations in technical advances, the size of the processed material is not a top-down approach, a minimum unit of the material and atoms from the molecular structure defined in a bottom-up technique to the components of the device, or by combining top-down approach and bottom-up approach to realize a new electronic devices has been studied. For example, having a gap length of a few nanometers using a nano-gap electrodes, a single nanoparticle in the gap between the nano-device or single molecule is placed has been studied (see Non-Patent Document 1 to 9.).
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAJIMA, Yutaka
  • NAKAMURA Eiichi
  • TSUJI Hayato
  • NOZAKI Kyoko
  • SHINTANI Ryo
  • OUYANG Chun
  • ITO Yuma
  • LEE SeungJoo
国際特許分類(IPC)
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