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3901 04708481 1598657 EPO METHOD FOR THE DETERMINATION OF ABSOLUTE CONFIGURATION OF CHIRAL COMPOUNDS achieved Jul 7, 2011 Jul 7, 2011 Japan Science and Technology Agency
3902 08841615 2214001 EPO Raman probe comprising a field amplifying element and method for its production and uses Jul 7, 2011 Apr 25, 2018 Japan Science and Technology Agency
3903 08852782 2221371 EPO TRANSLATION REGULATION SYSTEM IN CELL OR ARTIFICIAL CELL MODEL BY USING LOW-MOLECULAR-WEIGHT RNA Jul 7, 2011 Nov 20, 2013 Japan Science and Technology Agency
3904 08851746 2221367 EPO Protein-responsive translation control system utilizing rna-protein interaction motif Jul 7, 2011 Jul 19, 2017 Japan Science and Technology Agency
3905 00974855 1142591 EPO GENE CARRIERS achieved Jul 7, 2011 Jul 7, 2011 Japan Science and Technology Agency
3906 02703955 1369133 EPO GENE CARRIERS COMPRISING A BETA-1,3-GLUCAN AND PROCESS FOR PRODUCING THE SAME achieved Jul 7, 2011 Aug 7, 2012 Japan Science and Technology Agency
3907 03742658 1484614 EPO Fluorescent sensor for phosphate ion and phosphorylated peptide achieved Jul 7, 2011 Sep 8, 2015 Japan Science and Technology Agency
3908 06781972 1916697 EPO MICROCHANNEL PLATE, GAS PROPORTIONAL COUNTER AND IMAGING DEVICE Jul 7, 2011 Jun 27, 2013 Japan Science and Technology Agency
3909 03733149 1508586 EPO HYDROXYAPATITE COMPOSITE, PROCESS FOR PRODUCING THE SAME, AND MEDICAL MATERIAL COMPRISING THE SAME Jul 7, 2011 Oct 23, 2012 Japan Science and Technology Agency
3910 46388909 7993929 United States of America Method for determination of presence or absence of peptide compound PYY3-36 Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
3911 73959608 8601610 United States of America Optical electric field enhancement element and probe using the same Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
3912 74659908 8222629 United States of America Electronic device using quantum dot Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
3913 74390808 8592569 United States of America Small RNA-dependent translational regulatory system in cell or artificial cell model Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
3914 74385308 9255274 United States of America Protein-responsive translational regulatory system using RNA-protein interacting motif Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
3915 89043601 06549285 United States of America Two-arm Sagnac interferometer with three beam splitters Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3916 89043701 06552800 United States of America Single-arm sagnac interferometer with two beam splitters Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3917 01912238 1179592 EPO PROTEINS NECTIN-3 achieved Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3918 00979061 1235065 EPO METHOD OF DETERMINING ABSOLUTE CONFIGURATION OF CHIRAL COMPOUND Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3919 99949393 1063312 EPO HIGH-STRENGTH HIGH-TOUGHNESS AMORPHOUS ZIRCONIUM ALLOY Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3920 00981737 1162519 EPO PRODUCTION METHOD AND DEVICE FOR HOLOGRAM Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3921 02775366 1445237 EPO 12CaO 7Al2O3 COMPOUND AND METHOD FOR PREPARATION THEREOF achieved Jul 6, 2011 Apr 25, 2019 Japan Science and Technology Agency
3922 02779976 1443130 EPO NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM achieved Jul 6, 2011 Oct 5, 2011 Japan Science and Technology Agency
3923 03705133 1475678 EPO METHOD FOR PRODUCING A HOLOGRAM BY PICOSECOND LASER Jul 6, 2011 Jan 18, 2012 Japan Science and Technology Agency
3924 03705304 1489654 EPO METHOD OF MANUFACTURING LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM Jul 6, 2011 Sep 8, 2015 Japan Science and Technology Agency
3925 03717660 1500631 EPO Hydrogen-containing electrically conductive inorganic compound achieved Jul 6, 2011 Aug 8, 2017 Japan Science and Technology Agency
3926 04710529 1650164 EPO Electroconductive 12cao.7al2o3, 12sro.7al2o3 or mixture thereof and method for preparation thereof achieved Jul 6, 2011 Jan 6, 2016 Japan Science and Technology Agency
3927 10006629 2226847 EPO Amorphous oxide and thin film transistor achieved Jul 6, 2011 Feb 16, 2017 Japan Science and Technology Agency
3928 10007790 2246894 EPO Method for fabricating a thin film transistor having an amorphous oxide as a channel layer achieved Jul 6, 2011 Sep 28, 2015 Japan Science and Technology Agency
3929 05719601 1737044 EPO Amorphous oxide and thin film transistor achieved Jul 6, 2011 Sep 8, 2015 Japan Science and Technology Agency
3930 03756612 1555242 EPO COMPOSITION IN GEL FORM COMPRISING CARBON NANOTUBE AND IONIC LIQUID AND METHOD FOR PRODUCTION THEREOF Jul 6, 2011 Jul 3, 2012 Japan Science and Technology Agency
3931 04820166 1693950 EPO ACTUATOR ELEMENT AND PRODUCTION METHOD THEREFOR Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3932 08013572 1983009 EPO Method for producing the fluorinated compounds and polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3933 08013571 2014686 EPO Method for producing the fluorinated compounds and polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3934 04819878 1836231 EPO FLUORINATED POLYMERS, METHOD FOR PRODUCING THE FLUORINATED COMPOUNDS AND POLYMERS Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3935 09006883 2107056 EPO Fluorinated compounds, fluorinated polymers of the fluorinated compounds, and optical or electrical materials using the polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3936 04772815 1658278 EPO METHOD FOR PRODUCING FLUORINATED 1,3-DIOXOLANE COMPOUNDS, FLUORINATED 1,3-DIOXOLANE COMPOUNDS, FLUORINATED POLYMERS OF THE FLUORINATED 1,3-DIOXOLANE COMPOUNDS, AND OPTICAL OR ELECTRICAL MATERIALS USING THE POLYMERS Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
3937 03012408 7839903 United States of America Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3938 23424408 8253221 United States of America Gallium nitride bulk crystals and their growth method achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3939 97766107 7803344 United States of America Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3940 58563805 8331140 United States of America Current injection magnetic domain wall moving element Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3941 59945508 8383717 United States of America Synthetic polymers controlled in spiral structure, host-guest compounds prepared by using the same, and processes for production of both Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3942 57321204 7557258 United States of America Endotoxin-nonresponsive model animal achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3943 59020605 8110519 United States of America Polymer-supported metal cluster composition achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3944 59213805 7732638 United States of America Method of amidocarbonylation reaction Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3945 59196405 7375244 United States of America Production method for aminophosphonic acid derivatives Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3946 59182905 7470646 United States of America Polymer incarcerated Lewis acid metal catalyst achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3947 56793609 7910762 United States of America Asymmetric reaction catalyst and method for preparing optically active compound using the same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3948 58925905 7667078 United States of America Asymmetric reaction catalyst and method for preparing optically active compound using the same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3949 59213905 7705161 United States of America Process for producing nitrogenous 5-membered cyclic compound Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3950 79552506 7541307 United States of America Method for manufacturing an optically active hydroxymethylated compound and a catalyst therefore Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3951 28244407 8871668 United States of America Immobilized lewis acid catalysts coated with ionic liquids and use thereof Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3952 22463607 8318967 United States of America Polysilane-supported transition metal catalyst for liquid phase reaction Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3953 86505309 8222177 United States of America Catalyst and reaction process Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3954 92200809 8563765 United States of America Diamino acid derivative starting material, manufacturing method thereof, and diamino acid derivative manufacturing method Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3955 29400207 7790913 United States of America Fullerene derivative and methods for producing same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3956 28129406 8153835 United States of America Fullerene derivatives Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3957 29989807 9039935 United States of America Photoelectric conversion material containing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3958 29989407 8304643 United States of America Photoelectric conversion material containing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3959 51478207 8134019 United States of America Process for producing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3960 29918307 9136489 United States of America Method for producing organic photoelectric conversion device and organic photoelectric conversion device Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3961 81158807 7709441 United States of America Control of function of intracellular Ca ion Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3962 09496806 8017809 United States of America Bisboron compound Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3963 54449604 7736902 United States of America Method for determination of absolute configuration of chiral compounds achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
3964 08569606 7619109 United States of America Polyisocyanide derivative having controlled helical main chain structure Jul 5, 2011 Jul 19, 2018 Japan Science and Technology Agency
3965 04732786 1625850 EPO IMMUNOSTIMULATING AGENTS achieved Jul 4, 2011 Mar 6, 2012 Japan Science and Technology Agency
3966 04819775 1700916 EPO NOVEL CENTROMERIC PROTEIN SHUGOSHIN achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
3967 05720749 1743931 EPO LIQUID CRYSTAL DISPLAY DEVICE Jul 4, 2011 Aug 31, 2011 Japan Science and Technology Agency
3968 05709900 1717217 EPO METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE TYPE COMPOUND achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
3969 06729394 1868215 EPO Magnetic semiconductor material Jul 4, 2011 Sep 8, 2015 Japan Science and Technology Agency
3970 07828841 2067761 EPO Method of producing diol, polydiol, secondary alcohol or diketone compound Jul 4, 2011 Sep 8, 2015 Japan Science and Technology Agency
3971 50411609 20090278122 United States of America Amorphous oxide and thin film transistor achieved Jul 4, 2011 Feb 1, 2019 Japan Science and Technology Agency
3972 98496011 9269826 United States of America Amorphous oxide and thin film transistor achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3973 56774004 7315106 United States of America Actuator element and production method therefor Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3974 58097704 7582714 United States of America Fluorinated polymers, method for producing the fluorinated compounds and polymers Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3975 57021004 7635780 United States of America Method for producing fluorinated 1,3-dioxolane compounds, fluorinated 1, 3-dioxolane compounds, fluorinated polymers of the fluorinated 1,3-dioxolane compounds and optical or electrical materials using the polymers Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3976 20740708 8450192 United States of America Growth of planar, non-polar, group-III nitride films achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3977 67033207 7847293 United States of America Growth of reduced dislocation density non-polar gallium nitride achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3978 57612209 8766296 United States of America Highly efficient gallium nitride based light emitting diodes via surface roughening achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3979 58194003 7704763 United States of America Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3980 14089305 7208393 United States of America Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3981 69745707 7956360 United States of America Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3982 37291406 7220324 United States of America Technique for the growth of planar semi-polar gallium nitride achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3983 44408406 7361576 United States of America Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) Jul 4, 2011 Nov 15, 2016 Japan Science and Technology Agency
3984 04139808 07955983 United States of America Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
3985 44408306 7338828 United States of America Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3986 47218606 7518159 United States of America Packaging technique for the fabrication of polarized light emitting diodes achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3987 27258808 7723746 United States of America Packaging technique for the fabrication of polarized light emitting diodes achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3988 48622406 08148244 United States of America Lateral growth method for defect reduction of semipolar nitride films achieved Jul 4, 2011 Apr 18, 2012 Japan Science and Technology Agency
3989 12380505 7186302 United States of America Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3990 37047909 8502246 United States of America Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3991 40328806 7795146 United States of America Etching technique for the fabrication of thin (Al, In, Ga)N layers achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3992 44494606 7846757 United States of America Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3993 95302910 8686466 United States of America Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3994 51779706 7575947 United States of America Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3995 65557307 7691658 United States of America Method for improved growth of semipolar (Al,In,Ga,B)N achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3996 76562907 7755172 United States of America Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3997 79261510 8263424 United States of America Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
3998 00128607 7842527 United States of America Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved Jul 4, 2011 Nov 15, 2016 Japan Science and Technology Agency
3999 91490610 08178373 United States of America Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved Jul 4, 2011 May 23, 2012 Japan Science and Technology Agency
4000 00122707 9130119 United States of America Non-polar and semi-polar light emitting devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency

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