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701 09809498 2330699 EPO Two-dimensional photonic crystal laser Jul 1, 2011 Dec 15, 2016 Japan Science and Technology Agency
702 07827976 2090888 EPO Method for producing a biomolecule assay chip Jul 1, 2011 Jan 6, 2016 Japan Science and Technology Agency
703 09770271 2308916 EPO Polymer/metal complex composite having mri contrast ability and mri contrasting and/or antitumor composition using the same Jul 1, 2011 Nov 17, 2016 Japan Science and Technology Agency
704 03719228 1501124 EPO SOLID ELECTROLYTE SWITCHING DEVICES, FPGA AND MEMORY DEVICES USING THE SAME, AND METHOD OF MANUFACTURING THE SAME Jul 1, 2011 Jul 1, 2011 Japan Science and Technology Agency
705 02803565 1459727 EPO NONHUMAN MODEL ANIMAL UNRESPONSIVE TO IMMUNOPOTENTIATING SYNTHETIC COMPOUND achieved Jul 1, 2011 Jul 1, 2011 Japan Science and Technology Agency
706 03780720 1582980 EPO CONTEXT SWITCHING METHOD, DEVICE, PROGRAM, RECORDING MEDIUM, AND CENTRAL PROCESSING UNIT Jul 1, 2011 Mar 27, 2012 Japan Science and Technology Agency
707 05705096 1706205 EPO A CATALYTICAL ASYMMETRIC EPOXIDATION achieved Jul 1, 2011 Jul 1, 2011 Japan Science and Technology Agency
708 06802737 1928599 EPO LEWIS ACID CATALYZED HALOGENATION OF ACTIVATED CARBON ATOMS Jul 1, 2011 Oct 10, 2012 Japan Science and Technology Agency
709 03725621 1541988 EPO INFRARED FOCUSING DEVICE Jul 1, 2011 Jul 1, 2011 Japan Science and Technology Agency
710 05757808 1788637 EPO INFRARED DETECTOR Jul 1, 2011 Jul 1, 2011 Japan Science and Technology Agency
711 06796418 1952763 EPO Method and apparatus for measuring characteristic of object with acoustically induced electromagnetic wave Jul 1, 2011 Nov 30, 2016 Japan Science and Technology Agency
712 04732786 1625850 EPO IMMUNOSTIMULATING AGENTS achieved Jul 4, 2011 Mar 6, 2012 Japan Science and Technology Agency
713 04819775 1700916 EPO NOVEL CENTROMERIC PROTEIN SHUGOSHIN achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
714 05720749 1743931 EPO LIQUID CRYSTAL DISPLAY DEVICE Jul 4, 2011 Aug 31, 2011 Japan Science and Technology Agency
715 05709900 1717217 EPO METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE TYPE COMPOUND achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
716 06729394 1868215 EPO Magnetic semiconductor material Jul 4, 2011 Sep 8, 2015 Japan Science and Technology Agency
717 07828841 2067761 EPO Method of producing diol, polydiol, secondary alcohol or diketone compound Jul 4, 2011 Sep 8, 2015 Japan Science and Technology Agency
718 50411609 20090278122 United States of America Amorphous oxide and thin film transistor achieved Jul 4, 2011 Feb 1, 2019 Japan Science and Technology Agency
719 98496011 9269826 United States of America Amorphous oxide and thin film transistor achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
720 56774004 7315106 United States of America Actuator element and production method therefor Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
721 58097704 7582714 United States of America Fluorinated polymers, method for producing the fluorinated compounds and polymers Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
722 57021004 7635780 United States of America Method for producing fluorinated 1,3-dioxolane compounds, fluorinated 1, 3-dioxolane compounds, fluorinated polymers of the fluorinated 1,3-dioxolane compounds and optical or electrical materials using the polymers Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
723 20740708 8450192 United States of America Growth of planar, non-polar, group-III nitride films achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
724 67033207 7847293 United States of America Growth of reduced dislocation density non-polar gallium nitride achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
725 57612209 8766296 United States of America Highly efficient gallium nitride based light emitting diodes via surface roughening achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
726 58194003 7704763 United States of America Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
727 14089305 7208393 United States of America Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
728 69745707 7956360 United States of America Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
729 37291406 7220324 United States of America Technique for the growth of planar semi-polar gallium nitride achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
730 44408406 7361576 United States of America Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) Jul 4, 2011 Nov 15, 2016 Japan Science and Technology Agency
731 04139808 07955983 United States of America Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) achieved Jul 4, 2011 Jul 4, 2011 Japan Science and Technology Agency
732 44408306 7338828 United States of America Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
733 47218606 7518159 United States of America Packaging technique for the fabrication of polarized light emitting diodes achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
734 27258808 7723746 United States of America Packaging technique for the fabrication of polarized light emitting diodes achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
735 48622406 08148244 United States of America Lateral growth method for defect reduction of semipolar nitride films achieved Jul 4, 2011 Apr 18, 2012 Japan Science and Technology Agency
736 12380505 7186302 United States of America Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
737 37047909 8502246 United States of America Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
738 40328806 7795146 United States of America Etching technique for the fabrication of thin (Al, In, Ga)N layers achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
739 44494606 7846757 United States of America Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
740 95302910 8686466 United States of America Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
741 51779706 7575947 United States of America Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
742 65557307 7691658 United States of America Method for improved growth of semipolar (Al,In,Ga,B)N achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
743 76562907 7755172 United States of America Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
744 79261510 8263424 United States of America Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
745 00128607 7842527 United States of America Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved Jul 4, 2011 Nov 15, 2016 Japan Science and Technology Agency
746 91490610 08178373 United States of America Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved Jul 4, 2011 May 23, 2012 Japan Science and Technology Agency
747 00122707 9130119 United States of America Non-polar and semi-polar light emitting devices achieved Jul 4, 2011 Jul 20, 2018 Japan Science and Technology Agency
748 03012408 7839903 United States of America Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
749 23424408 8253221 United States of America Gallium nitride bulk crystals and their growth method achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
750 97766107 7803344 United States of America Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
751 58563805 8331140 United States of America Current injection magnetic domain wall moving element Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
752 59945508 8383717 United States of America Synthetic polymers controlled in spiral structure, host-guest compounds prepared by using the same, and processes for production of both Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
753 57321204 7557258 United States of America Endotoxin-nonresponsive model animal achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
754 59020605 8110519 United States of America Polymer-supported metal cluster composition achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
755 59213805 7732638 United States of America Method of amidocarbonylation reaction Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
756 59196405 7375244 United States of America Production method for aminophosphonic acid derivatives Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
757 59182905 7470646 United States of America Polymer incarcerated Lewis acid metal catalyst achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
758 56793609 7910762 United States of America Asymmetric reaction catalyst and method for preparing optically active compound using the same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
759 58925905 7667078 United States of America Asymmetric reaction catalyst and method for preparing optically active compound using the same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
760 59213905 7705161 United States of America Process for producing nitrogenous 5-membered cyclic compound Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
761 79552506 7541307 United States of America Method for manufacturing an optically active hydroxymethylated compound and a catalyst therefore Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
762 28244407 8871668 United States of America Immobilized lewis acid catalysts coated with ionic liquids and use thereof Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
763 22463607 8318967 United States of America Polysilane-supported transition metal catalyst for liquid phase reaction Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
764 86505309 8222177 United States of America Catalyst and reaction process Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
765 92200809 8563765 United States of America Diamino acid derivative starting material, manufacturing method thereof, and diamino acid derivative manufacturing method Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
766 29400207 7790913 United States of America Fullerene derivative and methods for producing same Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
767 28129406 8153835 United States of America Fullerene derivatives Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
768 29989807 9039935 United States of America Photoelectric conversion material containing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
769 29989407 8304643 United States of America Photoelectric conversion material containing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
770 51478207 8134019 United States of America Process for producing fullerene derivative Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
771 29918307 9136489 United States of America Method for producing organic photoelectric conversion device and organic photoelectric conversion device Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
772 81158807 7709441 United States of America Control of function of intracellular Ca ion Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
773 09496806 8017809 United States of America Bisboron compound Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
774 54449604 7736902 United States of America Method for determination of absolute configuration of chiral compounds achieved Jul 5, 2011 Jul 20, 2018 Japan Science and Technology Agency
775 46388909 7993929 United States of America Method for determination of presence or absence of peptide compound PYY3-36 Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
776 73959608 8601610 United States of America Optical electric field enhancement element and probe using the same Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
777 74659908 8222629 United States of America Electronic device using quantum dot Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
778 74390808 8592569 United States of America Small RNA-dependent translational regulatory system in cell or artificial cell model Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
779 74385308 9255274 United States of America Protein-responsive translational regulatory system using RNA-protein interacting motif Jul 6, 2011 Jul 20, 2018 Japan Science and Technology Agency
780 89043601 06549285 United States of America Two-arm Sagnac interferometer with three beam splitters Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
781 89043701 06552800 United States of America Single-arm sagnac interferometer with two beam splitters Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
782 01912238 1179592 EPO PROTEINS NECTIN-3 achieved Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
783 00979061 1235065 EPO METHOD OF DETERMINING ABSOLUTE CONFIGURATION OF CHIRAL COMPOUND Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
784 00981737 1162519 EPO PRODUCTION METHOD AND DEVICE FOR HOLOGRAM Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
785 02775366 1445237 EPO 12CaO 7Al2O3 COMPOUND AND METHOD FOR PREPARATION THEREOF achieved Jul 6, 2011 Apr 25, 2019 Japan Science and Technology Agency
786 02779976 1443130 EPO NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM achieved Jul 6, 2011 Oct 5, 2011 Japan Science and Technology Agency
787 03705133 1475678 EPO METHOD FOR PRODUCING A HOLOGRAM BY PICOSECOND LASER Jul 6, 2011 Jan 18, 2012 Japan Science and Technology Agency
788 03705304 1489654 EPO METHOD OF MANUFACTURING LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM Jul 6, 2011 Sep 8, 2015 Japan Science and Technology Agency
789 03717660 1500631 EPO Hydrogen-containing electrically conductive inorganic compound achieved Jul 6, 2011 Aug 8, 2017 Japan Science and Technology Agency
790 04710529 1650164 EPO Electroconductive 12cao.7al2o3, 12sro.7al2o3 or mixture thereof and method for preparation thereof achieved Jul 6, 2011 Jan 6, 2016 Japan Science and Technology Agency
791 10006629 2226847 EPO Amorphous oxide and thin film transistor achieved Jul 6, 2011 Feb 16, 2017 Japan Science and Technology Agency
792 10007790 2246894 EPO Method for fabricating a thin film transistor having an amorphous oxide as a channel layer achieved Jul 6, 2011 Sep 28, 2015 Japan Science and Technology Agency
793 05719601 1737044 EPO Amorphous oxide and thin film transistor achieved Jul 6, 2011 Sep 8, 2015 Japan Science and Technology Agency
794 03756612 1555242 EPO COMPOSITION IN GEL FORM COMPRISING CARBON NANOTUBE AND IONIC LIQUID AND METHOD FOR PRODUCTION THEREOF Jul 6, 2011 Jul 3, 2012 Japan Science and Technology Agency
795 08013572 1983009 EPO Method for producing the fluorinated compounds and polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
796 08013571 2014686 EPO Method for producing the fluorinated compounds and polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
797 04819878 1836231 EPO FLUORINATED POLYMERS, METHOD FOR PRODUCING THE FLUORINATED COMPOUNDS AND POLYMERS Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
798 09006883 2107056 EPO Fluorinated compounds, fluorinated polymers of the fluorinated compounds, and optical or electrical materials using the polymers Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
799 04772815 1658278 EPO METHOD FOR PRODUCING FLUORINATED 1,3-DIOXOLANE COMPOUNDS, FLUORINATED 1,3-DIOXOLANE COMPOUNDS, FLUORINATED POLYMERS OF THE FLUORINATED 1,3-DIOXOLANE COMPOUNDS, AND OPTICAL OR ELECTRICAL MATERIALS USING THE POLYMERS Jul 6, 2011 Jul 6, 2011 Japan Science and Technology Agency
800 06737745 1869707 EPO TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved Jul 7, 2011 Jun 19, 2012 Japan Science and Technology Agency

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