|発明の名称||METHOD FOR PRODUCING HIGH PERFORMANCE MATERIAL|
PROBLEM TO BE SOLVED: To provide a method for producing a high performance material by which a crystals constituting a material such as a semiconductor can be refined and further grown in such a manner that the crystal orientation is made uniform without deforming the shape of the material and adding impurities thereto and a compositional gradient structure on an atomic scale can be formed.
SOLUTION: A material such as an alloy consisting of two or more different elements or isotopes, or their solid solution or compound, or mixed crystals of the compound, or a mixture thereof is subjected to high gravitational field treatment. Concretely, gravitational acceleration of ≥10,000 g is applied at a temperature in which the material can hold a solid phase state and which is also the recrystallization temperature thereof or above. In this way, the element having high atomic weight is uniaxially dislocated to the gravity direction and large one-dimensional lattice strain is caused in the crystal structure, thus the crystals are refined. In the case treatment time is elongated, the sedimentation of the elements occurs, thus the crystals are grown in such a manner that the crystal orientation is made uniform, and further, a compositional gradient structure on an atomic scale is formed.
- 国立大学法人 熊本大学 マーケティング推進部 産学連携ユニット
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