|発明の名称||THERMAL TREATMENT EQUIPMENT AND THERMAL TREATMENT METHOD USING THE SAME|
PROBLEM TO BE SOLVED: To provide thermal treatment equipment and a thermal treatment method using the thermal treatment equipment conformable to form a monocrystal SiC in the following generation, by which heating at 1,200°C to 2,300°C in a short time is possible, even under a rare gas atmosphere where inert gas is introduced after reaching a pressure of not more than 10-2 Pa or after previously reaching the pressure of not more than 10-2 Pa.
SOLUTION: The thermal treatment equipment comprises: a heating chamber 2 for heating an object to be treated 5 at 1,200°C to 2,300°C in a short time under the rare gas atmosphere where the inert gas is introduced after reaching the pressure of not more than 10-2 Pa or after previously reaching the pressure of not more than 10-2 Pa; a front chamber 4 which is linked with the heating chamber 2 and is provided with moving means 10 for moving the treated object 5 to the heating chamber 2; and a preliminary heating chamber 3 which is linked with the front chamber 4 and previously heats the treated object 5 at 800°C or more under the pressure of not more than 10-2 Pa.
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