|発明の名称||METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE|
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal silicon carbide (SiC) substrate which is inexpensive and in which the deterioration of quality caused by the defect of a seed crystal is reduced.
SOLUTION: An SiC single crystal 28 being the seed crystal is arranged opposite to a C-atom feeding substrate 17 in a closed vessel 16, and then high temperature thermal treatment is performed. A metallic Si melt 18 is interposed between the SiC single crystal 28 and the C-atom feeding substrate 17, and liquid phase epitaxial growth is carried out. The SiC single crystal 28 being the seed crystal is formed to have a surface area smaller than that of the C-atom feeding substrate 17, and a plurality of SiC single crystals 28 are arranged. When the single crystal SiC 20 is formed on the upper surface part of the seed crystal 28, the metallic Si melt 18 is made to be present around the single crystal SiC 20 in the direction opposing to the C-atom feeding substrate 17 and in the vertical direction. Thus, the single crystal silicon carbide 20 is epitaxially grown in the direction opposing to the C-atom feeding substrate 17 and in the vertical direction (wherein the surface area is expanded). Thereby, the substrate 27 having a surface area larger than that of the seed crystal 28 is obtained.
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