|発明の名称||MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE|
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device wherein upon manufacturing Ge dots in multistage a Ge dot is formed at a position of an inverse pyramid recess on an Si substrate which is artificially position-controlled without causing the Ge dot to be split.
SOLUTION: The manufacturing method of multistage Ge dots, positions of which in a planar direction of the Ge dots are artificially controlled, comprises a first process of forming in an Si (100) substrate an inverse pyramid recess structure surrounded by at least four faces by etching; a second process of embedding Ge in the inverse pyramid recess structure so as to eliminate the recess; a third process of forming an Si layer after the foregoing processes; and a fourth process of forming the Ge dot above the Si layer and at a position where a lower Ge dot is existent.
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