|発明の名称||METHOD FOR PRODUCING THIN FILM|
PROBLEM TO BE SOLVED: To provide a method for producing a thin film of SiNx at a low temperature.
SOLUTION: The method for producing the thin film by using a photo-assisted CVD technique comprises the steps of: introducing two source gases (silane/NH3) into a reaction vessel having a substrate of an object to be treated placed therein; mixing the gases; controlling the temperature of the substrate to room temperature to 300°C; irradiating the substrate with an vacuum-ultraviolet light having the wavelength of 126 nm to form the thin film of SiNx; and further irradiating the substrate having the thin film of SiNx formed thereon with the vacuum-ultraviolet light to anneal the film.
- 国立大学法人宮崎大学 産学・地域連携センター知的財産部門
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