ANATASE-TYPE TITANIUM OXIDE, AND TRANSPARENT CONDUCTIVE THIN FILM
|Posted date||Feb 19, 2010|
|Date of filing||Jul 2, 2008|
|Date of publication of application||Jan 21, 2010|
|Date of registration||Jul 19, 2013|
|Title||ANATASE-TYPE TITANIUM OXIDE, AND TRANSPARENT CONDUCTIVE THIN FILM|
PROBLEM TO BE SOLVED: To provide a new conductor or a new transparent conductive thin film from which homogeneity can be expected and which has high moisture resistance.
SOLUTION: Disclosed is anatase-type titanium oxide in which the doped quantity of boron is from 1×1019 cm-3 to 5×1022 cm-3. Also disclosed is a transparent conductive thin film using anatase-type titanium oxide in which the doped quantity of boron is from 5×1020 cm-3 to 5×1022 cm-3. These can be obtained by the RF magnetron sputtering method in which titanium oxide having a diameter of 100 mm is used as a target, and boron (B) chips each having a 5 mm square are uniformly arranged on the target.
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|State of application right||Registered|
Contact Information for " ANATASE-TYPE TITANIUM OXIDE, AND TRANSPARENT CONDUCTIVE THIN FILM"
- Shimane University Department of Intellectual Property, Collaboration Center
- URL: http://www.crc.shimane-u.ac.jp/dip/home.htm
- Address: 2, Hokuryou-cho, Matsue-shi, Shimane, Japan , 690-0816
- Fax: 81-852-60-2395