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ANATASE-TYPE TITANIUM OXIDE, AND TRANSPARENT CONDUCTIVE THIN FILM meetings

Patent code P09A015119
File No. 20‐6
Posted date Feb 19, 2010
Application number P2008-173787
Publication number P2010-013309A
Patent number P5317033
Date of filing Jul 2, 2008
Date of publication of application Jan 21, 2010
Date of registration Jul 19, 2013
Inventor
  • (In Japanese)久保 衆伍
  • (In Japanese)山田 容士
  • (In Japanese)北川 裕之
Applicant
  • (In Japanese)国立大学法人島根大学
Title ANATASE-TYPE TITANIUM OXIDE, AND TRANSPARENT CONDUCTIVE THIN FILM meetings
Abstract PROBLEM TO BE SOLVED: To provide a new conductor or a new transparent conductive thin film from which homogeneity can be expected and which has high moisture resistance.
SOLUTION: Disclosed is anatase-type titanium oxide in which the doped quantity of boron is from 1×1019 cm-3 to 5×1022 cm-3. Also disclosed is a transparent conductive thin film using anatase-type titanium oxide in which the doped quantity of boron is from 5×1020 cm-3 to 5×1022 cm-3. These can be obtained by the RF magnetron sputtering method in which titanium oxide having a diameter of 100 mm is used as a target, and boron (B) chips each having a 5 mm square are uniformly arranged on the target.
Outline of related art and contending technology (In Japanese)


近年、PDP(プラズマディスプレイパネル)やELパネルなどに適用するために、透明電極の研究開発が進んでいる。実際、ITOやZnOの研究開発が進められITOを用いたものは製品化されている。



また、Nb(ニオブ)をドープした酸化チタンも透明導電性を有することが知られている(非特許文献1)。



【非特許文献1】
一杉太郎ほか「ガラス状におけるNbドープ二酸化チタン薄膜の透明伝導性」 セラミックス 42(2007)No.1pp32~36

Field of industrial application (In Japanese)


本発明は、ホウ素をドープしたアナターゼ型酸化チタンに関する。

Scope of claims (In Japanese)
【請求項1】
 
ホウ素のドープ量を1×1019cm-3~5×1022cm-3とした、抵抗値が10-3[Ω・cm]以下である透明導電性アナターゼ型酸化チタン。
IPC(International Patent Classification)
F-term
Drawing

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JP2008173787thum.jpg
State of application right Registered
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