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METHOD AND DEVICE FOR GROWING HIGH QUALITY SINGLE CRYSTAL achieved

Patent code P110002783
File No. Y00-P119
Posted date Jun 8, 2011
Application number P2000-150679
Publication number P2001-039791A
Patent number P3893012
Date of filing May 22, 2000
Date of publication of application Feb 13, 2001
Date of registration Dec 15, 2006
Priority data
  • P1999-178815 (May 22, 1999) JP
Inventor
  • (In Japanese)佐々木 孝友
  • (In Japanese)森 勇介
  • (In Japanese)吉村 政志
Applicant
  • (In Japanese)独立行政法人科学技術振興機構
Title METHOD AND DEVICE FOR GROWING HIGH QUALITY SINGLE CRYSTAL achieved
Abstract

PROBLEM TO BE SOLVED: To obtain a high purity and high performance single crystal even when the viscosity of a raw material liquid is high by providing a blade body or a baffle in the raw material liquid in a crucible and pulling up the single crystal while rotating the crucible without rotating the blade body, or the like.

SOLUTION: When a single crystal is grown by bringing a seed crystal 4 supported by a seed rod 3 into contact with a molten raw material liquid 2 obtained by heating in a crucible 1, a blade body 5 is provided in the raw material liquid 2 and the crystal is grown while rotating the crucible 1. Further, a rotating body 6, which rotates in the state such that the crucible is mounted on it, is also provided in a device. The seed rod 3 is pulled up upward while being rotated or being kept in a static state. Thus, the stirring effect on the raw material liquid 2 is enhanced by providing the blade body 5 and rotating the crucible 1, thereby the thickness of a diffusion boundary layer, which causes troubles at the time of growing, can be made thin and the supplying amount of raw material to the growing surface is increased, and further, it becomes possible to uniformize the degree of supersaturation.

Field of industrial application (In Japanese)
この出願の発明は、CLBO単結晶の育成方法に関するものである。さらに詳しくは、
この出願の発明は、高粘性の溶液原料であっても高品質なCLBO単結晶を育成することのできるCLBO単結晶の育成方法に関するものである。
Scope of claims (In Japanese)
【請求項1】
  るつぼ内の底部近くに羽根体もしくはじゃま板体を配置し、るつぼ内の原料溶液に種子結晶を接触または浸漬し、種子結晶を接触または浸漬した原料溶液の液面下を徐冷し、羽根体もしくはじゃま板体を回転させることなくるつぼを回転させ、原料溶液内で種子結晶の表面に一般式CsLiB6O10で示される組成物(CLBO)の単結晶を育成させることを特徴とするCLBO単結晶の育成方法。
【請求項2】
  るつぼを回転させるとともに、種子結晶も回転させる請求項1記載のCLBO単結晶の育成方法。
【請求項3】
  CLBO単結晶は、一般式CsLiB6O10においてCs、Liの少なくとも一方を他のアルカリ元素もしくはアルカリ土類金属元素の少なくとも一種により部分的に置換された組成物からなる請求項1または2記載のCLBO単結晶の育成方法。
Industrial division
  • Treatment operation
  • Inorganic compound
IPC(International Patent Classification)
F-term
State of application right Right is in force
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