Top > Search of Japanese Patents > MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY

MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved

Patent code P110003011
File No. A112P56
Posted date Jun 10, 2011
Application number P2002-156564
Publication number P2003-342285A
Patent number P3951171
Date of filing May 30, 2002
Date of publication of application Dec 3, 2003
Date of registration May 11, 2007
Inventor
  • (In Japanese)中村 新男
  • (In Japanese)竹田 美和
  • (In Japanese)藤原 康文
  • (In Japanese)茜 俊光
  • (In Japanese)町田 英明
  • (In Japanese)大平 達也
  • (In Japanese)野津 定央
  • (In Japanese)下山 紀男
Applicant
  • (In Japanese)国立研究開発法人科学技術振興機構
  • (In Japanese)株式会社トリケミカル研究所
Title MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved
Abstract PROBLEM TO BE SOLVED: To provide a technique by which a high performance electronic device, especially the electronic device high in wave length stability and emission efficiency and having remarkably little dependence on environmental temperatures by adding a lanthanoid element.
SOLUTION: A material for forming electron transferable bodies comprises tris-ethylcyclopentadienyl-Ln.
Field of industrial application (In Japanese)


本発明は、例えば半導体や導体と言った電子移動が可能な電子移動可能体に関する。

Scope of claims (In Japanese)
【請求項1】
  Ga,In,Pを含む層とGa,In,Pを含む層との間に電子移動可能体膜を有する電子移動可能体における前記電子移動可能体膜を形成する為の材料であって、
前記材料はトリス-エチルシクロペンタジエニル-Lnからなる
ことを特徴とする電子移動可能体形成材料。
IPC(International Patent Classification)
F-term
State of application right Registered
Reference ( R and D project ) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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