|発明の名称||SUPER-MAGNETOSTRICTIVE THIN-FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME|
PROBLEM TO BE SOLVED: To manufacture a super-magnetostrictive thin-film element to show higher magnetostrictive characteristics within a lower magnetic field by utilizing materials having less worry about an amount of deposits in future.
SOLUTION: In the super-magnetostrictive thin-film element including a substrate and a thin film of super-magnetostrictive material formed on the substrate, the thin film is formed of a super-magnetostrictive material of Sm-Fe system achieved by vapor growth in the composition of 15 at%≤Sm≤23 at%. Internal stress of the thin film is set equal to compression stress of 220 MPa to 130 MPa. On the occasion of vapor growth of the thin film formed of the super-magnetostrictive material, it is desirable that inert gas pressure is set to ≤0.7 Pa and heat treatment is conducted under the temperature of 200°C to 300°C during film formation or after formation thereof. Accordingly, magnetic distortion within the impressed magnetic field of 80 kA/m can be set to ≤-700 ppm.
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