|発明の名称||SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE|
PROBLEM TO BE SOLVED: To attain a single crystal silicon carbide substrate with little defects, such as micro pipe or the like.
SOLUTION: The single crystal substrate 27 is manufactured as follows. A C atom supplying substrate 17 and a substrate 5’ which has a seed surface 5b consisting of single crystal silicon carbide and having an area smaller than that of the C atom supplying substrate 17 are made to counter together, and a metallic silicon melt 18 is made to be present between the seed surface 5b and the C atom supplying substrates 17, and between a region of a surface direction outside of the seed surface 5b and the C atom supplying substrate 17, and heat-treated uniformly within a sealed container 16, and thus single crystal silicon carbide carries out liquid phase epitaxial growth on the seed surface 5b and the surface direction outside the seed surface 5b. A crystal which grows up on the surface direction outside the seed surface 5b grows up at the speed quicker than that of a crystal which grows on the seed surface 5b. The single crystal substrate 27 has an area larger than the area of the seed surface 5b, and the surface by the side of the C atom supplying substrate 17 which is formed in the shape of flatness parallel to the seed surface 5b by the liquid phase epitaxial growth.
- 関西学院大学 研究推進社会連携機構
- URL: http://www.kwansei.ac.jp/kenkyu/
- Address: 〒669-1337 兵庫県三田市学園２丁目１番地
- TEL: 079-565-9052
- FAX: 079-565-7910