|発明の名称||THREE-DIMENSIONALLY MICROFABRICATED SUBSTRATE|
PROBLEM TO BE SOLVED: To process a high-density complicated three-dimensional microstructure.
SOLUTION: The three-dimensional microstructure on a substrate is manufactured through first to fourth processes. In the first process, group III oxide 3 substitutes for a natural oxide film 2 on a surface of a group III-V compound semiconductor substrate 1 by irradiating the surface of the substrate 1 with an electron beam under a vacuum to form a modified mask part 3 periodically. In the second process, the natural oxide film 2 at a part other than the modified mask parts 3 is desorbed by raising the temperature of the substrate 1 under a vacuum to expose the surface of the substrate. In the third process, group III atoms are preferentially separated from the exposed part on the surface of the substrate to hop on the modified mask parts 3 by heating the substrate 1 at a predetermined temperature in an environment in which a group V raw material is supplied under a vacuum, and a hollow 4 is thereby formed in the exposed part. In the fourth process, a group III-V compound semiconductor crystal 5 is selectively grown at the part of the hollow 4 by a molecular beam epitaxial growth method using solid growth materials.
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