|発明の名称||THREE-DIMENSIONAL MICROFABRICATION METHOD AND THREE-DIMENSIONAL MICROSTRUCTURE|
PROBLEM TO BE SOLVED: To provide a three-dimensional microfabrication method to fabricate a micro mask precisely by reducing regions modified by electronic beams and to fabricate a precise three-dimensional micro structure using the mask.
SOLUTION: A three-layer inorganic resist oxidation film 10 including an As thin film 2, a Ga2O3 thin film 4 and an As thin film 5 on the surface of a GaAs substrate 1. In the processes shown in (f) to (g) in selected figures, the Ga2O3 thin film 4 and part of the GaAs substrate 1 are closely fixed by the electronic beams irradiated onto the surface of the three-layer inorganic resist oxidation film 10 in vacuum, thus to form a heat-resistant modified mask portion 17. In the process shown in (h), the As thin film 2 is sublimated, and the Ga2O3 thin film 4 other than the modified mask portion 17 is separated to make the surface of the GaAs substrate 1 expose. In the process shown in (i), the three-dimensional microfabrication structure is fabricated on which a dent is formed by performing etching and by detaching Ga preferably from the exposed portion of the GaAs substrate 1.
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