|発明の名称||MANUFACTURING METHOD OF SEMICONDUCTOR WAFER|
PROBLEM TO BE SOLVED: To provide a manufacturing method of a large-size semiconductor wafer almost free of crystal defects, wherein the manufacturing method develops an epitaxial layer using the MSE process.
SOLUTION: In a first step, protrusions 42 are formed on the surface of an SiC substrate 40, which is then subjected to etching. In a second step, the protrusions 42 of the SiC substrate 40 is subjected to epitaxial growth by the MSE method and at least part of epitaxial layers 43a containing screw dislocation well grown in the vertical (c-axis) direction is removed. In a third step, the MSE method is again applied to the SiC substrate 40 after the second step and the epitaxial layers 43 not containing the screw dislocation grow in the horizontal (a-axis) direction, connecting with each other at a molecular level, and thus a semiconductor wafer 45 of a large-area single crystal 4H-SiC is formed on a whole area of an Si-face or a C-face of the SiC substrate 40.
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