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(In Japanese)炭化ケイ素半導体装置及びその製造方法 (Patent unpublished to the public) meetings

Patent code P200017194
File No. 19T027
Posted date Sep 15, 2020
Application number P2019-140141
Date of filing Jul 30, 2019
Inventor
  • (In Japanese)松下 雄一郎
Applicant
  • TOKYO INSTITUTE OF TECHNOLOGY
Title (In Japanese)炭化ケイ素半導体装置及びその製造方法 (Patent unpublished to the public) meetings
Abstract (In Japanese)SiC MOSFETにおけるSiO2・SiC構造の界面欠陥準位の原因を解明し、その界欠陥面準位を減少させて、従来のSiC MOSFETと比べて移動度を向上させた炭化ケイ素半導体装置を提供する。
IPC(International Patent Classification)
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